Spin-torque nano-oscillators (STNOs) have emerged as an intriguing category of spintronic
devices based on spin transfer torque to excite magnetic moment dynamics. The ultra-wide …

The rapid advancement of smart grids highlights the indispensable need for accurate current
measurement. TMR current sensors stand out as pivotal technologies for the future of smart …

Magnetoresistive random access memory (MRAM) is a promising non-volatile memory
technology that can be utilized as an energy and space-efficient storage and computing …

Benefitting from its non-volatility, high speed, low power and inherent radiation hardened
characteristic, magnetic random access memory (MRAM) has been used in aerospace and …

Perpendicular magnetic tunnel junctions with double-interface free layer (p-DMTJs), which
exhibit enhanced tunnel magnetoresistance (TMR) and thermal stability (Δ) at the …

Until now, spin transfer torque magnetic random access memory (STT-MRAM) has drawn
considerable R&D interest worldwide. A number of companies and universities are currently …

The study of interface spin effects in spintronic multilayer films requires distinguishing the
effects generated by different interfaces. However, testing in atmospheric conditions requires …

As device integration density increases exponentially as predicted by Moore's law, power
consumption becomes a bottleneck for system scaling where leakage power of on-chip …

Conclusion. In this study, we design an integrated system of perception, memory, and
classification for THz images. We handle the simple image classification by unique binary …