Avalanche photodiodes (APDs) are widely used to detect and amplify weak optical signals
by utilizing the impact ionization process. The choice of material is critical for the detection of …

We report on a gated single-photon detector based on InGaAs/InP avalanche photodiodes
(APDs) with a single-photon detection efficiency exceeding 55% at 1550nm. Our detector is …

We present a review of GaN avalanche photodiodes. GaN-based avalanche photodiodes
are of emerging interest to the device community. The review covers various important …

Photomultiplication, initiated by both pure electron and pure hole injection, has been
measured in submicrometer Si p+-in+ and n+-ip+ diodes with intrinsic region thicknesses w …

Single-photon detection at near-infrared (NIR) wavelengths is critical for light detection and
ranging (LiDAR) systems used in imaging technologies such as autonomous vehicle …

Simple analytical expressions for temperature coefficients of breakdown voltage of
avalanche photodiodes (APDs) utilizing InP or InAlAs are reported. The work is based on …

Carrier multiplication via impact ionization in two-dimensional (2D) layered materials is a
very promising process for manufacturing high-performance devices because the …

The authors report on the photocurrent gain in a diamond photodetector that has two
nonohmic contacts connected back-to-back. This photocurrent gain strongly depends on …

This paper presents a demonstration of a 278 V GaN avalanche photodiode offering a
photoresponsivity of 60 A/W and capable of operating at high temperature with a high gain …

The high-field carrier transport properties of 4H-SiC including the impact ionization
coefficients are theoretically analyzed based on a full-band Monte Carlo simulation. The …