We describe the characterization of native phase defects in the manufacturing of extreme
ultraviolet (EUV) mask blanks using the state-of-the-art mask metrology equipment in …

Mask inspection is essential for the success of any pattern transfer lithography technology,
and extreme ultraviolet lithography (EUVL), in particular, faces unique challenges. EUV …

Blank defect mitigation is crucial for extreme ultraviolet (EUV) lithography. One of the
existing options is to relocate patterns to avoid defect impact. However, when the defect …

We present the potential optical performance capabilities of a next-generation extreme
ultraviolet (EUV) mask-imaging microscope, based on the proven optical principle of the …

Miniaturization is a driving force both for the performance and for cost reductions of
semiconductor devices. It is therefore carried on at an enormous pace. Gordon Moore …

Blank defect mitigation is a critical step for extreme ultraviolet (EUV) lithography. Targeting
the defective blank, a layout relocation method, to shift and rotate the whole layout pattern to …

Extreme ultraviolet (EUV) lithography mask defects may cause severe reflectivity
deformation and phase shift in advanced nodes, especially like multilayer defects …

Due to the absence of defect-free blanks in extreme ultraviolet (EUV) lithography, defect
mitigation is necessary before mass production. Currently almost all the defect mitigation …

By employing simulation, we analyzed the characteristic of the optics of high-magnification
multilayer-coated mirror employed for the examination of extreme ultraviolet lithography …

The key challenge before extreme ultraviolet lithography is to make defect-free masks, for
which it is important to identify the root cause of defects, and it is also necessary to establish …