Recent success with the fabrication of high-performance GaN-on-Si high-voltage HFETs has
made this technology a contender for power electronic applications. This paper discusses …

The piezoelectric and spontaneous polarization of wurtzite Sc x Al 1− x N, Ga x Al 1− x N,
and In x Al 1− x N ternary compounds dramatically affects the electrical properties of …

This letter reports the fabrication of InAlN/GaN high-electron mobility transistors (HEMTs)
with a three-terminal off-state breakdown voltage (BV) of 3000 V and a low specific on …

In this paper, we carried out an analysis of the breakdown characterization method by the
investigation on off-state leakage currents and breakdown curves. For conventional …

We demonstrate the electrical performances of the quaternary InAlGaN/GaN MIS-HEMTs
with high quality SiNx gate dielectric and surface passivation layer deposited by low …

This letter demonstrates a novel enhancement-mode (E-mode) tri-gate nanowire InAlN/GaN
MOSHEMT with ultrasonic spray pyrolysis deposition (USPD) deposited Al 2 O 3 as the gate …

We report on recent progress on the development of Scandium Aluminum Nitride (ScAlN)
based heterostructure field effect transistors (HFETs). We are leveraging the enhanced …

In this paper, we demonstrate a 253% improvement in the off-state breakdown voltage (BV)
of the lattice-matched In 0.17 Al 0.83 N/GaN high-electron-mobility transistors (HEMTs) by …

For devices with a 15 micron anode-tocathode distance, nearly 1.5 times increase in the
blocking (breakdown) voltage (from 692 to 1030 V) has been achieved by replacing the …

This paper presents a comprehensive TCAD based assessment to evaluate the intrinsic
gain and minimum noise figure metrics of the T–Gate, and the π–Gate AlGaN/AlN/GaN …