Extending the spectrum of fully integrated photonics to submicrometre wavelengths

MA Tran, C Zhang, TJ Morin, L Chang, S Barik, Z Yuan… - Nature, 2022 - nature.com
Integrated photonics has profoundly affected a wide range of technologies underpinning
modern society,,–. The ability to fabricate a complete optical system on a chip offers …

Efficiency droop in nitride‐based light‐emitting diodes

J Piprek - physica status solidi (a), 2010 - Wiley Online Library
Nitride‐based light‐emitting diodes (LEDs) suffer from a reduction (droop) of the internal
quantum efficiency with increasing injection current. This droop phenomenon is currently the …

The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films

C Lamberti - Surface Science Reports, 2004 - Elsevier
In the last couple of decades, high-performance electronic and optoelectronic devices based
on semiconductor heterostructures have been required to obtain increasingly strict and well …

What limits the maximum output power of long-wavelength AlGaInAs/InP laser diodes?

J Piprek, JK White… - IEEE journal of quantum …, 2002 - ieeexplore.ieee.org
We analyze the high-temperature continuous-wave performance of 1.3-/spl mu/m
AlGaInAs/InP laser diodes grown by digital alloy molecular-beam epitaxy. Commercial laser …

Electrically‐Driven Photonic Crystal Lasers with Ultra‐low Threshold

E Dimopoulos, A Sakanas… - Laser & Photonics …, 2022 - Wiley Online Library
Light sources with ultra‐low energy consumption and high performance are required to
realize optical interconnects for on‐chip communication. Photonic crystal (PhC) nanocavity …

Electrical scanning probe microscopy: Investigating the inner workings of electronic and optoelectronic devices

SB Kuntze, D Ban, EH Sargent… - Critical Reviews in …, 2005 - Taylor & Francis
Semiconductor electronic and optoelectronic devices such as transistors, lasers, modulators,
and detectors are critical to the contemporary computing and communications infrastructure …

1.3-/spl mu/m quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: a theoretical study

JCL Yong, JM Rorison, IH White - IEEE journal of quantum …, 2002 - ieeexplore.ieee.org
Due to the keen interest in improving the high-speed and high-temperature performance of
1.3-/spl mu/m wavelength lasers, we compare, for the first time, the material gain of three …

Numerical investigation of self-heating effects of oxide-confined vertical-cavity surface-emitting lasers

Y Liu, WC Ng, KD Choquette… - IEEE journal of quantum …, 2005 - ieeexplore.ieee.org
We present a comprehensive numerical model to simulate self-heating effects of oxide-
confined vertical-cavity surface-emitting lasers (VCSELs) under continuous-wave operation …

Highly efficient chip-scale III-V/silicon hybrid optical amplifiers

S Cheung, Y Kawakita, K Shang, SJ Ben Yoo - Optics Express, 2015 - opg.optica.org
We discuss the design and demonstration of highly efficient 1.55 µm hybrid III-V/Silicon
semiconductor optical amplifiers (SOA). The optimized III-V wafer stack consists of Al_0 …

Fabry-Perot lasers: Thermodynamics-based modeling

U Bandelow, H Gajewski, R Hünlich - Optoelectronic devices: Advanced …, 2005 - Springer
This chapter describes the modeling and the simulation of edgeemitting quantum well (QW)
lasers, based on the drift-diffusion equations and equations for the optical field. By applying …