Radiation effects in GaN materials and devices
This article reviews the effects of radiation damage on GaN materials and devices such as
light-emitting diodes and high electron mobility transistors. Protons, electrons and gamma …
light-emitting diodes and high electron mobility transistors. Protons, electrons and gamma …
[HTML][HTML] A road map for reliable power electronics for more electric aircraft
The gradual evolution from hydro-pneumatic to electrical disposition of power in aircraft has
placed stringent requirements on the reliability of power electronic components in current …
placed stringent requirements on the reliability of power electronic components in current …
Ionizing radiation damage effects on GaN devices
Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high
power and high frequency applications, with higher breakdown voltages and two …
power and high frequency applications, with higher breakdown voltages and two …
[LIVRE][B] Radiation effects in advanced semiconductor materials and devices
C Claeys, E Simoen - 2013 - books.google.com
In the modern semiconductor industry, there is a growing need to understand and combat
potential radiation damage problems. Space applications are an obvious case, but, beyond …
potential radiation damage problems. Space applications are an obvious case, but, beyond …
Review of radiation damage in GaN-based materials and devices
A review of the effectsof proton, neutron, γ-ray, and electron irradiation on GaN materials
and devices is presented. Neutron irradiation tends to create disordered regions in the GaN …
and devices is presented. Neutron irradiation tends to create disordered regions in the GaN …
Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors
X Hu, AP Karmarkar, B Jun… - … on Nuclear Science, 2003 - ieeexplore.ieee.org
The degradation of AlGaN/AlN/GaN high electron mobility transistors due to 1.8-MeV proton
irradiation was measured at fluences up to 3/spl times/10/sup 15/cm/sup-2/. The devices …
irradiation was measured at fluences up to 3/spl times/10/sup 15/cm/sup-2/. The devices …
Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs
The responses to 1.8 MeV proton irradiation of AlGaN/GaN HEMTs grown under Ga-rich and
ammonia-rich conditions are investigated in this work. Changes in defect energy …
ammonia-rich conditions are investigated in this work. Changes in defect energy …
The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors
X Hu, BK Choi, HJ Barnaby… - … on Nuclear Science, 2004 - ieeexplore.ieee.org
The effects of proton irradiation at various energies are reported for AlGaN/GaN high
electron mobility transistors (HEMTs). The devices exhibit little degradation when irradiated …
electron mobility transistors (HEMTs). The devices exhibit little degradation when irradiated …
On the radiation tolerance of AlGaN/GaN HEMTs
The radiation tolerance of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated
on high quality, low threading dislocation density (TDD) ammonothermal GaN and hydride …
on high quality, low threading dislocation density (TDD) ammonothermal GaN and hydride …
/sup 60/Co gamma irradiation effects on n-GaN Schottky diodes
The effect of/spl gamma/-ray exposure on the electrical characteristics of nickel/n-GaN
Schottky barrier diodes has been investigated using current-voltage (IV), capacitance …
Schottky barrier diodes has been investigated using current-voltage (IV), capacitance …