Nanomechanical resonators: toward atomic scale
The quest for realizing and manipulating ever smaller man-made movable structures and
dynamical machines has spurred tremendous endeavors, led to important discoveries, and …
dynamical machines has spurred tremendous endeavors, led to important discoveries, and …
A state-of-art review on gallium oxide field-effect transistors
As a promising ultra-wide bandgap (UWBG) semiconductor, gallium oxide (Ga 2 O 3) has
recently aroused increasing attention in the area for high-power electronics, power switch for …
recently aroused increasing attention in the area for high-power electronics, power switch for …
[HTML][HTML] Ultrawide bandgap semiconductors
Ultrawide bandgap (UWBG) semiconductors, with energy bandgaps (> 4 eV), much wider
than the conventional wide bandgap (WBG) of GaN (3.4 eV) and SiC (3.2 eV), represent an …
than the conventional wide bandgap (WBG) of GaN (3.4 eV) and SiC (3.2 eV), represent an …
Diffusion of dopants and impurities in β-Ga2O3
The understanding and availability of quantitative measurements of the diffusion of dopants
and impurities in Ga 2 O 3 are currently at an early stage. In this work, we summarize what is …
and impurities in Ga 2 O 3 are currently at an early stage. In this work, we summarize what is …
[HTML][HTML] A perspective on β-Ga2O3 micro/nanoelectromechanical systems
Beta gallium oxide (β-Ga 2 O 3) is an emerging ultrawide bandgap (∼ 4.8 eV)
semiconductor with attractive properties for future power and radio frequency (RF) …
semiconductor with attractive properties for future power and radio frequency (RF) …
[HTML][HTML] Young's modulus and corresponding orientation in β-Ga2O3 thin films resolved by nanomechanical resonators
We report on the nondestructive measurement of Young's modulus of thin-film single crystal
beta gallium oxide (β-Ga 2 O 3) out of its nanoscale mechanical structures by measuring …
beta gallium oxide (β-Ga 2 O 3) out of its nanoscale mechanical structures by measuring …
Atomic layer self-transducing MoS2 vibrating channel transistors with 0.5 pm/Hz1/2 displacement sensitivity at room temperature
We report on the experimental demonstration of high-performance suspended channel
transistors with single-and bilayer (1L and 2L) molybdenum disulfide (MoS 2), and on …
transistors with single-and bilayer (1L and 2L) molybdenum disulfide (MoS 2), and on …
The sound of music at the nanoscale——exploring the nanoscale world with nanoelectromechanical systems based on low dimensional nanomaterials
ZHU Jian-Kai, XU Bo, W Zeng-Hui - PHYSICS, 2024 - wuli.iphy.ac.cn
The advent of low-dimensional nanostructures has enabled a plethora of new devices and
systems. Among them, nanoelectromechanical systems offer the unique capability of …
systems. Among them, nanoelectromechanical systems offer the unique capability of …
微纳世界的音乐之声——用低维纳米机电器件探索微观世界
朱健凯， 徐博， 王曾晖 - 物理, 2024 - wuli.iphy.ac.cn
纳米机电器件是具有机械运动自由度的纳米电子器件. 特别有趣的是, 纳米机电器件同时也构成
了微纳世界的各种乐器, 能够演奏出独特的音乐之声. 如同宏观世界中的乐器各有各的特色 …
了微纳世界的各种乐器, 能够演奏出独特的音乐之声. 如同宏观世界中的乐器各有各的特色 …
[HTML][HTML] AVS 67 Session LI-TuM2: Tuesday Morning Live Session II: Current and Emerging Devices
A Creatore, T Olsson - avssymposium.org
Aluminum Nitride (AlN) is a well-established thin film piezoelectric material. AlN bulk
acoustic wave (BAW) radio frequency (RF) filters were one of the key innovations that …
acoustic wave (BAW) radio frequency (RF) filters were one of the key innovations that …