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Ultrahigh-resolution scanning microwave impedance microscopy of moiré lattices and superstructures
Two-dimensional heterostructures composed of layers with slightly different lattice vectors
exhibit new periodic structure known as moiré lattices, which, in turn, can support novel …
exhibit new periodic structure known as moiré lattices, which, in turn, can support novel …
Imaging dual-moiré lattices in twisted bilayer graphene aligned on hexagonal boron nitride using microwave impedance microscopy
Moiré superlattices (MSLs) formed in van der Waals materials have become a promising
platform to realize novel two-dimensional electronic states. Angle-aligned trilayer structures …
platform to realize novel two-dimensional electronic states. Angle-aligned trilayer structures …
Application of atomic force microscopy technology in do** characterization of semiconductor materials and devices
X Liu, X Wang, X Liu, Y Song, Y Zhang, H Wang… - Microelectronic …, 2024 - Elsevier
The precise characterization of the do** profile is crucial for optimizing the performance
and structural integrity of semiconductor devices. As the size of semiconductor devices …
and structural integrity of semiconductor devices. As the size of semiconductor devices …
[HTML][HTML] Scanning microwave impedance microscopy and its applications: A review
D Tami, DAA Ohlberg, C Gonçalves do Rego… - APL Materials, 2025 - pubs.aip.org
Scanning microwave impedance microscopy (sMIM) has become a powerful tool for
nanoscale characterization, utilizing microwave frequencies to probe the material properties …
nanoscale characterization, utilizing microwave frequencies to probe the material properties …
[HTML][HTML] All-optical lithography process for contacting nanometer precision donor devices
We describe an all-optical lithography process that can make electrical contact to nanometer-
precision donor devices fabricated in silicon using scanning tunneling microscopy (STM) …
precision donor devices fabricated in silicon using scanning tunneling microscopy (STM) …
Electric current paths in a Si: P delta-doped device imaged by nitrogen-vacancy diamond magnetic microscopy
The recently-developed ability to control phosphorous-do** of silicon at an atomic level
using scanning tunneling microscopy, a technique known as atomic precision advanced …
using scanning tunneling microscopy, a technique known as atomic precision advanced …
Near-field microwave microscopy: Subsurface imaging for in situ characterization
A Tselev - IEEE Microwave Magazine, 2020 - ieeexplore.ieee.org
The centuries-old field of microscopy has revolutionized and is now indispensable in the
natural sciences, medicine, and many branches of technology. New techniques and …
natural sciences, medicine, and many branches of technology. New techniques and …
Multi-scale alignment to buried atom-scale devices using Kelvin probe force microscopy
Fabrication of quantum devices by atomic-scale patterning with scanning tunneling
microscopy (STM) has led to the development of single/few atom transistors, few …
microscopy (STM) has led to the development of single/few atom transistors, few …
Assessing atomically thin delta-do** of silicon using mid-infrared ellipsometry
Hydrogen lithography has been used to template phosphine-based surface chemistry to
fabricate atomic-scale devices, a process we abbreviate as atomic precision advanced …
fabricate atomic-scale devices, a process we abbreviate as atomic precision advanced …
Scanning microwave impedance microscopy: Room-temperature and low-temperature applications for device and material characterization
RC Chintala, K Rubin, Y Yang - IEEE Microwave Magazine, 2020 - ieeexplore.ieee.org
For more than 50 years, Moore's law has creatively captured how the capability of
electronics has expanded by creating ever smaller devices and exploiting new materials …
electronics has expanded by creating ever smaller devices and exploiting new materials …