(52) US Cl........................................................ 427/569 (57) ABSTRACT (58) Field of
Classification Search................... 427/569 In one embodiment, a method for depositing a …

(57) Embodiments of the invention provide methods for forming hafnium materials, such as
oxides and nitrides, by sequen tially exposing a Substrate to hafnium precursors and active …

Methods for depositing a contact metal layer in contact struc tures of a semiconductor device
are provided. In one embodi ment, a method for depositing a contact metal layer for form ing …

Methods for forming a integrated gate dielectric layer on a substrate are provided. In one
embodiment, the method includes forming a silicon oxide layer on a substrate, plasma …

A high-pressure processing system for processing a substrate includes a first chamber, a
pedestal positioned within the first chamber to support the substrate, a second chamber …

A method and apparatus for rapid thermal annealing compris ing a plurality of lamps affixed
to a lid of the chamber that provide at least one wavelength of light, a laser source extend …

(57) ABSTRACT Correspondence Address: PATTERSON & SHERIDAN, LLP--APPM/TX The
present invention generally describes apparatuses and 3040 POST OAKBOULEVARD …

US7837838B2 - Method of fabricating a high dielectric constant transistor gate using a low
energy plasma apparatus - Google Patents US7837838B2 - Method of fabricating a high …

US7645710B2 - Method and apparatus for fabricating a high dielectric constant transistor gate
using a low energy plasma system - Google Patents US7645710B2 - Method and apparatus …

110 imparted by each pulse to dissipate completely. Thus, each pulse completes a micro-
anneal cycle. The pulses may be delivered to the entire substrate at once, or to portions of …