Abstract Gallium oxide (Ga 2 O 3), an emerging ultra-wide-bandgap semiconductor, has the
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …

Wide-bandgap semiconductors are expected to be applied to solid-state lighting and power
devices, supporting a future energy-saving society. While GaN-based white LEDs have …

Abstract β-Ga 2 O 3 bulk crystals were grown by the edge-defined film-fed growth (EFG)
process and the floating zone process. Semiconductor substrates containing no twin …

We report a demonstration of single-crystal gallium oxide (Ga 2 O 3) metal-semiconductor
field-effect transistors (MESFETs). A Sn-doped Ga 2 O 3 layer was grown on a semi …

Gallium oxide has attracted a considerable interest as a functional material for various
applications. This review summarizes the research work carried out in the field of gallium …

The successful growth of 2-in. β-Ga 2 O 3 crystals by the edge-defined, film fed growth (EFG)
method was demonstrated. The optimization of growth conditions for larger single crystalline …

The polarized transmittance and reflectance spectra of β-Ga 2 O 3 crystals are investigated,
and the data are interpreted in terms of the monoclinic crystal band structure. The energies …

Temperature-dependent cathodoluminescence spectra were measured from (001)
unintentionally doped,(100) Si-doped, and (010) Mg-doped β-Ga 2 O 3 substrates prepared …

Abstract Monoclinic β-Ga 2 O 3 (bandgap= 4.85 eV) is a transparent semiconducting oxide
with very promising perspectives especially in solar blind UV photodetectors and high power …

Epitaxial growth of ε-Ga 2 O 3 is demonstrated for the first time. The ε-Ga 2 O 3 films are
grown on GaN (0001), AlN (0001), and β-Ga 2 O 3 (⁠ 2 01⁠) by halide vapor phase epitaxy …