In this paper, we present the progress in the growth of nanoscale semiconductors grown via
atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD …

Atomic layer deposition (ALD) is a unique tool for conformally depositing inorganic thin films
with precisely controlled thickness at nanoscale. Recently, ALD has been used in the …

Indium nitride (InN) is a low bandgap, high electron mobility semiconductor material of
interest to optoelectronics and telecommunication. Such applications require the deposition …

In this work, we report on self-limiting growth of InN thin films at substrate temperatures as
low as 200 C by hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD). The …

In this work, we have studied the role varying nitrogen plasma compositions play in the low-
temperature plasma-assisted growth of indium nitride (InN) thin films. Films were deposited …

Recent designs have allowed hollow cathode gas plasma sources to be adopted for use in
plasma-enhanced atomic layer deposition with the benefit of lower oxygen contamination for …

Atomistic control over the growth of semiconductor thin films, such as aluminum nitride, is a
long-sought goal in materials physics. One promising approach is plasma-assisted atomic …

Herein, we report on atomic layer deposition of ternary InxGa1− xN alloys with different
indium contents using a remotely integrated hollow cathode plasma source. Depositions …

The authors reported the hollow-cathode plasma-assisted atomic layer deposition of AlN,
GaN, and InN films using N 2-only and N 2/H 2 plasma. In this study, the authors analyzed …

We develop a microscopic theoretical model of AlN, GaN, and InN film growth by atomic
layer epitaxy. To make the model realistic, we take into account the atomic hydrogen that is …