AlGaN-based materials own direct transition energy bands and wide bandgap and thus can
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …

Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …

We present a deep-ultraviolet semiconductor laser diode that operates under current
injection at room temperature and at a very short wavelength. The laser structure was grown …

The performance characteristics of AlGaN-based deep ultraviolet light emitting diodes (UV-
LEDs) grown by metalorganic vapor phase epitaxy on sputtered and high temperature …

In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …

Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep
ultraviolet (DUV) applications, the performance of conventional Al (Ga) N planar devices …

In recent years, ultrawide bandgap semiconductor materials represented by aluminum
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …

In order to understand the influence of dislocations on do** and compensation in Al-rich
AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on …

We demonstrated continuous-wave lasing of an AlGaN-based ultraviolet laser diode,
fabricated on a single-crystal AlN substrate when operating at 5 C. The threshold current …

We report on the molecular beam epitaxial growth and structural characterization of self-
organized AlGaN nanowire arrays on Si substrate with high luminescence efficiency …