BACKGROUND The continued development of metal-oxide-semiconduc tor field-effect
transistors (MOSFET) has improved the speed, density, and cost per unit function of …

The following presents a simplified Summary in order to provide a basic understanding of
one or more aspects of the 55 invention. This summary is not an extensive overview of the …

(57) ABSTRACT A method is provided for fabricating a semiconductor-on insulator (“SOI)
substrate. In such method an SOI substrate is formed to include (i) an SOI layer of …

The present invention provides a FINFET structure of a non-planar MOSFET to improve
efficiency in preventing ion penetration issues and leakage current issues. In order to …

US8487354B2 - Method for improving selectivity of epi process - Google Patents US8487354B2
- Method for improving selectivity of epi process - Google Patents Method for improving …

US8106467B2 - Semiconductor device having carrier mobility raised by generating strain in
channel region - Google Patents US8106467B2 - Semiconductor device having carrier mobility …

BACKGROUND 0002 Semiconductor devices are used in a variety of elec tronic
applications, such as personal computers, cellphones, digital cameras, and other electronic …

A method for selectively relieving channel stress for n-channel transistors with recessed,
epitaxial SiGe source and drain regions is described. This increases the electron mobility for …

US PATENT DOCUMENTS spacers;(d) etching the silicon Substrate and the sacrificial film
to form recesses in the silicon Substrate, and to change a cross sectional shape of each of …

(57) ABSTRACT A strained-channel transistor structure with lattice-mis matched Zone and
fabrication method thereof. The transistor structure includes a Substrate having a strained …