[BOOK][B] Semiconductor surfaces and interfaces
W Mönch - 2013 - books.google.com
Semiconductor Surfaces and Interfaces deals with structural and electronic properties of
semiconductor surfaces and interfaces. The first part introduces the general aspects of …
semiconductor surfaces and interfaces. The first part introduces the general aspects of …
Photoelectron spectroscopy of surface states on semiconductor surfaces
GV Hansson, RIG Uhrberg - Surface science reports, 1988 - Elsevier
Photoelectron spectroscopy is the main tool for investigations of the electronic structure of
semiconductor surfaces. By the use of angle-resolved photoemission it has been possible to …
semiconductor surfaces. By the use of angle-resolved photoemission it has been possible to …
[BOOK][B] Silicon surfaces and formation of interfaces: basic science in the industrial world
J Dabrowski, HJ Mussig - 2000 - books.google.com
Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and
applied semiconductor, and its surfaces are the most thoroughly studied of all …
applied semiconductor, and its surfaces are the most thoroughly studied of all …
Self-consistent study of the electronic and structural properties of the clean Si (001)(2× 1) surface
We report a systematic study of density-functional theory calculations for the reconstructed Si
(100)(2× 1) surface. We find that converged calculations favor buckled dimers (θ≈ 15°) over …
(100)(2× 1) surface. We find that converged calculations favor buckled dimers (θ≈ 15°) over …
Dynamics of Exciton Formation at the Si(100) Surface
Carrier recombination at the Si (100) c (4× 2) surface and the underlying surface electronic
structure is unraveled by a combination of two-photon photoemission and many-body …
structure is unraveled by a combination of two-photon photoemission and many-body …
Electronic structure of Si(100)c(4×2) calculated within the GW approximation
JE Northrup - Physical Review B, 1993 - APS
The electronic structure of the Si (100) c (4× 2) surface has been calculated using a
quasiparticle formalism in which the self-energy is evaluated in the GW approximation. The …
quasiparticle formalism in which the self-energy is evaluated in the GW approximation. The …
Surface-state band structure of the Si (100) 2× 1 surface studied with polarization-dependent angle-resolved photoemission on single-domain surfaces
The electronic structure of the Si (100) 2× 1 surface has been studied with polarization-
dependent angle-resolved photoemission. By using vicinal Si (100) samples, single-domain …
dependent angle-resolved photoemission. By using vicinal Si (100) samples, single-domain …
Surface atomic geometry of Si (001)-(2× 1): A low-energy electron-diffraction structure analysis
H Over, J Wasserfall, W Ranke, C Ambiatello… - Physical Review B, 1997 - APS
The reconstruction of the Si (001)-2× 1 surface consists of asymmetric and buckled Si
dimers. The vertical separation between the up and the down atom within the dimer is about …
dimers. The vertical separation between the up and the down atom within the dimer is about …
Inverse-photoemission study of Ge (100), Si (100), and GaAs (100): Bulk bands and surface states
We present momentum-resolved inverse-photoemission data from Ge (100) 2× 1, Si (100)
2× 1, and GaAs (100) 4× 2 surfaces. The bulk conduction bands of these three …
2× 1, and GaAs (100) 4× 2 surfaces. The bulk conduction bands of these three …
Electronic structure and electron dynamics at Si (100)
The electronic structure and electron dynamics at a Si (100) surface is studied by two-photon
photoemission (2PPE). At 90 K the occupied D up dangling-bond state is located 150±50 …
photoemission (2PPE). At 90 K the occupied D up dangling-bond state is located 150±50 …