Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the
prospect of efficient laser sources monolithically integrated on a Si photonic platform. For …

GeSn alloys are the subject of intense research activities as these group IV semiconductors
present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes …

We have demonstrated flexible GeSn metal–semiconductor–metal (MSM) photodetectors
(PDs) by exploring the effect of mechanical strain on their optoelectronic properties. The PDs …

The full exploration of Si-based photonic integrated circuits is limited by the lack of an
efficient light source that is compatible with the complementary metal–oxide–semiconductor …

Light‐emitting complex defects in silicon have been considered a potential platform for
quantum technologies based on spin and photon degrees of freedom working at telecom …

Understanding the dynamics of the laser crystallization (LC) process of Ge thin films by
nanosecond (ns) pulsed infrared (IR) lasers is important for producing homogeneous, crack …

We investigate the temperature dependence of the Ge Raman mode strain–phonon
coefficient in Ge/Si heteroepitaxial layers. By analyzing the temperature‐dependent …

This study reports the bandgap engineering of a Ge epitaxial layer on Si to tune the
operating wavelength of optical intensity modulators and photodetectors in the C (1.530 …

This work presents how first-principles simulations validated through experimental
measurements lead to a new accurate prediction of the expected Raman shift as a function …

Strain-stress relationships for physical properties are of interest for heteroepitaxial material
systems, where strain and stress are inherent due to thermal expansion and lattice …