Global data traffic is growing rapidly, and the demand for optoelectronic transceivers applied
in data centers (DCs) is also increasing correspondingly. In this review, we first briefly …

We report a Germanium waveguide electro-absorption modulator with electro-optic
bandwidth substantially beyond 50 GHz. The device is implemented in a fully integrated Si …

Room temperature direct gap photoluminescence (PL) was observed from n-type tensile-
strained epitaxial Ge-on-Si. The PL intensity increases with n-type do** due to a higher …

Group IV lasers are expected to revolutionize chip-to-chip optical communications in terms
of cost, scalability, yield, and compatibility to the existing infrastructure of silicon industries …

This work presents a novel method to introduce a sustainable biaxial tensile strain larger
than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman …

It has been demonstrated theoretically and experimentally that germanium, with proper
strain engineering and n-type do**, can be an efficient light emitter and a gain medium at …

In this paper, we report a Hall mobility of one million in a germanium two-dimensional hole
gas. The extremely high hole mobility of 1.1× 10 6 cm 2 V− 1 s− 1 at a carrier sheet density …

The thermoelectric and physical properties of superlattices consisting of modulation doped
Ge quantum wells inside Si 1− y Ge y barriers are presented, which demonstrate …

Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge
cannot emit light efficiently. However, the direct band gap energy is close to the indirect one …

Vertical incidence photodiodes were fabricated from Ge grown epitaxially on Si (100) by low-
energy plasma-enhanced chemical vapor deposition. Consideration of the energy band …