Two-dimensional (2D) crystal semiconductors, such as the well-known molybdenum
disulfide (MoS 2), are witnessing an explosion in research activities due to their apparent …

This paper discusses the electronic transport properties of nanowire field-effect transistors
(NW-FETs). Four different device concepts are studied in detail: Schottky-barrier NW-FETs …

The silicon nanowire transistor (SNWT) is a promising device structure for future integrated
circuits, and simulations will be important for understanding its device physics and …

A program to numerically simulate quantum transport in double gate metal oxide
semiconductor field effect transistors (MOSFETs) is described. The program uses a Green's …

The impact of band lineup and source do** concentration on the performance of
heterojunction tunnel FETs (H-TFETs) with type-II heterointerface is investigated by …

The performance of a 5-nm gate length monolayer MoS 2 transistor is benchmarked against
an ultrathin body Si transistor of similar dimensions and the ITRS requirements for 2026 low …

Phonon heat transport property in quantum devices is of great interesting since it presents
significant quantum behaviors. In the past few decades, great efforts have been devoted to …

In the present article we will discuss the electronic trans‐port properties of carbon nanotube
field‐effect transistors (CNFETs). Three different device concepts will be studied in more …

Based on the nonequilibrium Green's function formalism, we have developed a three-
dimensional (3D) simulation framework capable of handling electronic transport in …

We predict that within next 15 years a fundamental down-scaling limit for CMOS technology
and other Field-Effect Transistors (FETs) will be reached. Specifically, we show that at room …