Spintronics aims to go beyond the charge-based paradigm of silicon-based microelectronics
by utilizing the spin degree of freedom for memory, storage and computing applications …

Ferromagnets are key materials for sensing and memory applications. In contrast,
antiferromagnets, which represent the more common form of magnetically ordered materials …

Spintronics, that is, the utilization of electron spin to enrich the functionality of
microelectronics, has led to the inception of numerous novel devices, particularly magnetic …

Spin-transfer torque and spin Hall effects combined with their reciprocal phenomena, spin
pum** and inverse spin Hall effects (ISHEs), enable the reading and control of magnetic …

Using antiferromagnets as active elements in spintronics requires the ability to manipulate
and read-out the Néel vector orientation. Here we demonstrate for Mn2Au, a good conductor …

Antiferromagnets are hard to control by external magnetic fields because of the alternating
directions of magnetic moments on individual atoms and the resulting zero net …

Antiferromagnetic materials could represent the future of spintronic applications thanks to
the numerous interesting features they combine: they are robust against perturbation due to …

Antiferromagnetic materials are internally magnetic, but the direction of their ordered
microscopic moments alternates between individual atomic sites. The resulting zero net …

We predict that a lateral electrical current in antiferromagnets can induce nonequilibrium
Néel-order fields, ie, fields whose sign alternates between the spin sublattices, which can …

Noncollinear antiferromagnets, such as Mn 3 Sn and Mn 3 Ir, were recently shown to be
analogous to ferromagnets in that they have a large anomalous Hall effect. Here we show …