Group-III nitrides catalyzed transformations of organic molecules
Group-III nitrides, touted as the next-generation semiconductors beyond Si, have brought
dramatic changes to our everyday life over the past 3 decades. With revolutionary …
dramatic changes to our everyday life over the past 3 decades. With revolutionary …
Patterned III‐Nitrides on Porous GaN: Extending Elastic Relaxation from the Nano‐to the Micrometer Scale
Investigations of the use of patterned porous GaN underlayers to achieve elastic relaxation
of lattice‐mismatched top layers such as InGaN and AlGaN are reviewed. Thereby, the …
of lattice‐mismatched top layers such as InGaN and AlGaN are reviewed. Thereby, the …
[HTML][HTML] Efficient photoelectrochemical conversion of CO2 to syngas by photocathode engineering
The synthesis of renewable chemical fuels from CO 2 and H 2 O via photoelectrochemical
(PEC) route reprensents a promising room-temperature approach for transforming …
(PEC) route reprensents a promising room-temperature approach for transforming …
[HTML][HTML] Characterization of the parasitic masking layer formed during GaN SA-MOVPE using PECVD SiO2 masks
X-ray photoelectron spectroscopy (XPS) was used to study the surface composition of the
parasitic masking layer formed during selective area metalorganic vapor phase epitaxy …
parasitic masking layer formed during selective area metalorganic vapor phase epitaxy …
Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN (001) for Narrow-Bandgap Optoelectronics
The existence of an uncontrolled electron accumulation layer near the surface of InN thin
films is an obstacle for the development of reliable InN-based devices for use in narrow …
films is an obstacle for the development of reliable InN-based devices for use in narrow …
Nanoscale and quantum engineering of III-nitride heterostructures for high efficiency UV-C and far UV-C optoelectronics
We present an overview of some recent advances of nanoscale and quantum engineering of
III-nitride heterostructures that are relevant for the development of high efficiency ultraviolet …
III-nitride heterostructures that are relevant for the development of high efficiency ultraviolet …
Nanoscale AlGaN and BN: molecular beam epitaxy, properties, and device applications
In this chapter, we present an overview on the recent development of AlGaN and BN
nanostructures by plasma-assisted molecular beam epitaxy and their emerging device …
nanostructures by plasma-assisted molecular beam epitaxy and their emerging device …
The role of the scandium element concentration in the YN matrix: Ab initio study of structural, electronic, mechanical and thermal properties
This study shows that the substitution of Scandium in the Yttrium Nitride matrix improves the
mechanic properties quality and increase his melting point. In this framework, we use the …
mechanic properties quality and increase his melting point. In this framework, we use the …