Current status of AlInN layers lattice-matched to GaN for photonics and electronics
We report on the current properties of Al 1− x In x N (x≈ 0.18) layers lattice-matched (LM) to
GaN and their specific use to realize nearly strain-free structures for photonic and electronic …
GaN and their specific use to realize nearly strain-free structures for photonic and electronic …
Distributed Bragg reflectors for GaN-based vertical-cavity surface-emitting lasers
Featured Application GaN based vertical-cavity surface-emitting lasers. Abstract A
distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor …
distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor …
[LIBRO][B] Zinc oxide: fundamentals, materials and device technology
This first systematic, authoritative and thorough treatment in one comprehensive volume
presents the fundamentals and technologies of the topic, elucidating all aspects of ZnO …
presents the fundamentals and technologies of the topic, elucidating all aspects of ZnO …
High electron mobility lattice-matched AlInN∕ GaN field-effect transistor heterostructures
Room temperature electron mobility of 1170 cm 2∕ V s is obtained in an undoped, lattice-
matched, Al 0.82 In 0.18 N∕ Ga N field-effect transistor heterostructure, while kee** a …
matched, Al 0.82 In 0.18 N∕ Ga N field-effect transistor heterostructure, while kee** a …
Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors
K Ikeyama, Y Kozuka, K Matsui, S Yoshida… - Applied Physics …, 2016 - iopscience.iop.org
The room-temperature continuous-wave operation of a 1.5 λ-cavity GaN-based vertical-
cavity surface-emitting laser with an n-type conducting AlInN/GaN distributed Bragg reflector …
cavity surface-emitting laser with an n-type conducting AlInN/GaN distributed Bragg reflector …
Progresses in III‐nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials
We propose to use lattice‐matched AlInN/GaN to replace the Al (Ga) N/GaN material system
for III‐nitride Bragg reflectors, despite the poor material quality of AlInN reported until very …
for III‐nitride Bragg reflectors, despite the poor material quality of AlInN reported until very …
Milliwatt‐class GaN‐based blue vertical‐cavity surface‐emitting lasers fabricated by epitaxial lateral overgrowth
T Hamaguchi, N Fuutagawa, S Izumi… - … status solidi (a), 2016 - Wiley Online Library
We have achieved continuous‐wave (CW) operation of gallium nitride (GaN)‐based vertical‐
cavity surface‐emitting lasers (VCSELs) fabricated by epitaxial lateral overgrowth (ELO) …
cavity surface‐emitting lasers (VCSELs) fabricated by epitaxial lateral overgrowth (ELO) …
Epitaxial lattice-matched AlScN/GaN distributed Bragg reflectors
We demonstrate epitaxial lattice-matched Al 0.89 Sc 0.11 N/GaN 10 and 20 period
distributed Bragg reflectors (DBRs) grown on c-plane bulk n-type GaN substrates by plasma …
distributed Bragg reflectors (DBRs) grown on c-plane bulk n-type GaN substrates by plasma …
A review on the latest progress of visible GaN-based VCSELs with lateral confinement by curved dielectric DBR reflector and boron ion implantation
T Hamaguchi, M Tanaka… - Japanese Journal of …, 2019 - iopscience.iop.org
This review introduces the latest progress on gallium nitride (GaN)-based visible vertical-
cavity surface-emitting lasers (VCSELs) with features such as plane and curved distributed …
cavity surface-emitting lasers (VCSELs) with features such as plane and curved distributed …
Recent progress in the growth of highly reflective nitride-based distributed Bragg reflectors and their use in microcavities
The growth of highly-reflective nitride-based distributed Bragg reflectors (DBRs) and their
use in vertical cavity structures is reviewed. We discuss the various nitride material systems …
use in vertical cavity structures is reviewed. We discuss the various nitride material systems …