III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis
In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
Dawn of nitride ferroelectric semiconductors: from materials to devices
III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …
been extensively investigated in the past decades. New functionalities, such as …
The micro-LED roadmap: status quo and prospects
Micro light-emitting diode (micro-LED) will play an important role in the future generation of
smart displays. They are found very attractive in many applications, such as maskless …
smart displays. They are found very attractive in many applications, such as maskless …
A red-emitting micrometer scale LED with external quantum efficiency> 8%
Significant efforts are being put into the development of efficient micrometer-scale light
emitting diodes (LEDs) for future display technologies due to their marked benefits over …
emitting diodes (LEDs) for future display technologies due to their marked benefits over …
An ultrahigh efficiency excitonic micro-LED
High efficiency micro-LEDs, with lateral dimensions as small as one micrometer, are desired
for next-generation displays, virtual/augmented reality, and ultrahigh-speed optical …
for next-generation displays, virtual/augmented reality, and ultrahigh-speed optical …
Ferroelectric nitride heterostructures on CMOS compatible molybdenum for synaptic memristors
Achieving ferroelectricity in III-nitride (III-N) semiconductors by alloying with rare-earth
elements, eg, scandium, has presented a pivotal step toward next-generation electronic …
elements, eg, scandium, has presented a pivotal step toward next-generation electronic …
Ferroelectric N-polar ScAlN/GaN heterostructures grown by molecular beam epitaxy
We demonstrate robust ferroelectricity in single-crystalline wurtzite phase N-polar
ScAlN/GaN heterostructures grown on on-axis c-plane sapphire substrates by molecular …
ScAlN/GaN heterostructures grown on on-axis c-plane sapphire substrates by molecular …
InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering
Micro or submicron scale light-emitting diodes (µLEDs) have been extensively studied
recently as the next-generation display technology. It is desired that µLEDs exhibit high …
recently as the next-generation display technology. It is desired that µLEDs exhibit high …
N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs
A high efficiency, high brightness, and robust micro or sub-microscale red light emitting
diode (LED) is an essential, yet missing, component of the emerging virtual reality and future …
diode (LED) is an essential, yet missing, component of the emerging virtual reality and future …
N-polar GaN: Epitaxy, properties, and device applications
Abstract In recent years, Gallium Nitride (GaN) has been established as a material of choice
for high power switching, high power RF and lighting applications. In c-direction, depending …
for high power switching, high power RF and lighting applications. In c-direction, depending …