Modern data centers increasingly rely on interconnects for delivering critical
communications connectivity among numerous servers, memory, and computation …

Low-cost, small-footprint, highly efficient, and mass-producible on-chip wavelength-division-
multiplexing (WDM) light sources are key components in future silicon electronic and …

On-chip integration of optical comb sources is crucial in enabling their widespread use.
Integrated photonic devices that can be mass-manufactured in semiconductor processing …

We describe the initial efforts to use molecular beam epitaxy to grow InAs quantum dots on
GaAs via the Stranski–Krastanov transition and then discuss the initial efforts to use these …

High gain and high saturation output power silicon-based semiconductor optical amplifiers
(SOAs) are essential elements in future large-scale silicon photonic integrated circuits (PICs) …

III–V semiconductor lasers epitaxially grown on silicon, especially on a silicon-on-insulator
(SOI) platform, have been considered one of the most promising approaches to realize an …

Mode-locked InAs/InGaAs quantum dot lasers emitting optical frequency combs centered at
1310 nm are promising sources for high-speed and high-capacity communication …

Large-scale high-performance computing (HPC) systems in the form of supercomputers and
warehouse-scale data centers permeate nearly every corner of modern life from applications …

Efficient light generation and amplification has long been missing on the silicon platform due
to its well-known indirect bandgap nature. Driven by the size, weight, power and cost (SWaP …

This work reports on an investigation of the optical feedback in an InAs/InGaAs passively
mode-locked quantum dot (QD) laser epitaxially grown on silicon. Under the stably-resonant …