[BOOK][B] Nucleation theory and growth of nanostructures
VG Dubrovskii - 2014 - Springer
Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
[HTML][HTML] Thermodynamic theory of growth of nanostructures
XL Li, CX Wang, GW Yang - Progress in Materials Science, 2014 - Elsevier
Self-assembled nanostructures, such as quantum dots (QDs), quantum rings (QRs) and
nanowires (NWs), have been extensively studied because of their physical properties and …
nanowires (NWs), have been extensively studied because of their physical properties and …
[BOOK][B] Epitaxy of nanostructures
The general trend in modern solid state physics and technology is to make things smaller.
The size of key elements in modern devices approaches the nanometer scale, for both …
The size of key elements in modern devices approaches the nanometer scale, for both …
Self-assembly of InAs quantum dots on GaAs (001) by molecular beam epitaxy
J Wu, P ** - Frontiers of Physics, 2015 - Springer
Currently, the nature of self-assembly of three-dimensional epitaxial islands or quantum dots
(QDs) in a lattice-mismatched heteroepitaxial growth system, such as InAs/GaAs (001) and …
(QDs) in a lattice-mismatched heteroepitaxial growth system, such as InAs/GaAs (001) and …
Observation of reentrant 2D to 3D morphology transition in highly strained epitaxy: InAs on GaAs
R Heitz, TR Ramachandran, A Kalburge, Q **e… - Physical review …, 1997 - APS
Abstract The two-dimensional (2D) to three-dimensional (3D) transition in highly strained
growth of InAs of GaAs (001) is investigated using in situ scanning tunneling microscopy and …
growth of InAs of GaAs (001) is investigated using in situ scanning tunneling microscopy and …
Formation and stability of self-assembled coherent islands in highly mismatched heteroepitaxy
We study the energetics of island formation in Stranski-Krastanow growth within a parameter-
free approach. It is shown that an optimum island size exists for a given coverage and island …
free approach. It is shown that an optimum island size exists for a given coverage and island …
Size distribution in self-assembled InAs quantum dots on GaAs (001) for intermediate InAs coverage
Photoluminescence spectroscopy is used to investigate the size distribution of InAs quantum
dots embedded in GaAs quantum wells as function of substrate temperature and InAs …
dots embedded in GaAs quantum wells as function of substrate temperature and InAs …
Size, shape, and stability of InAs quantum dots on the GaAs (001) substrate
We study the energetics of island formation in Stranski-Krastanow growth of highly
mismatched heteroepitaxy within a parameter-free approach. It is shown that the (frequently …
mismatched heteroepitaxy within a parameter-free approach. It is shown that the (frequently …
Mass transfer in Stranski–Krastanow growth of InAs on GaAs
TR Ramachandran, R Heitz, P Chen… - Applied Physics …, 1997 - pubs.aip.org
We present a quantitative study of the evolution of the material contained in two-and three-
dimensional (2D and 3D) surface features during the 2D–3D morphology transition in highly …
dimensional (2D and 3D) surface features during the 2D–3D morphology transition in highly …
Quantum dot self-assembly in growth of strained-layer thin films: A kinetic Monte Carlo study
KE Khor, SD Sarma - Physical Review B, 2000 - APS
Abstract We use Monte Carlo (MC) simulations to study island formation in the growth of thin
semiconducting films deposited on lattice-mismatched substrates. It is known that islands …
semiconducting films deposited on lattice-mismatched substrates. It is known that islands …