[HTML][HTML] Recent progress in heterogeneous III-V-on-silicon photonic integration
Silicon (Si) photonics is a disruptive technology on the fast track to revolutionise integrated
photonics. An indispensable branch thereof, heterogeneous Si integration, has also evolved …
photonics. An indispensable branch thereof, heterogeneous Si integration, has also evolved …
Alternative plasmonic materials: beyond gold and silver
Materials research plays a vital role in transforming breakthrough scientific ideas into next‐
generation technology. Similar to the way silicon revolutionized the microelectronics …
generation technology. Similar to the way silicon revolutionized the microelectronics …
Ultra‐High Performance Amorphous Ga2O3 Photodetector Arrays for Solar‐Blind Imaging
The growing demand for scalable solar‐blind image sensors with remarkable photosensitive
properties has stimulated the research on more advanced solar‐blind photodetector (SBPD) …
properties has stimulated the research on more advanced solar‐blind photodetector (SBPD) …
Roadmap on silicon photonics
Silicon photonics research can be dated back to the 1980s. However, the previous decade
has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology …
has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology …
Silicon photonics for high-capacity data communications
In recent years, optical modulators, photodetectors,(de) multiplexers, and heterogeneously
integrated lasers based on silicon optical platforms have been verified. The performance of …
integrated lasers based on silicon optical platforms have been verified. The performance of …
[PDF][PDF] Graphene-β-Ga2O3 heterojunction for highly sensitive deep UV photodetector application
WY Kong, GA Wu, KY Wang, TF Zhang, YF Zou… - Adv …, 2016 - optoele.hfut.edu.cn
DOI: 10.1002/adma. 201604049 deep ultraviolet (DUV) light illumination (wavelength 254
nm) with good reproducibility and stability. It was also revealed that the photocurrent of the …
nm) with good reproducibility and stability. It was also revealed that the photocurrent of the …
Lasing in direct-bandgap GeSn alloy grown on Si
Large-scale optoelectronics integration is limited by the inability of Si to emit light efficiently,
because Si and the chemically well-matched Ge are indirect-bandgap semiconductors. To …
because Si and the chemically well-matched Ge are indirect-bandgap semiconductors. To …
Self-powered diamond/β-Ga 2 O 3 photodetectors for solar-blind imaging
Self-powered solar-blind photodetectors based on diamond/β-Ga2O3 heterojunctions have
been fabricated. Under zero bias, these photodetectors show a peak responsivity of 0.2 mA …
been fabricated. Under zero bias, these photodetectors show a peak responsivity of 0.2 mA …
Chip-integrated ultrafast graphene photodetector with high responsivity
Graphene-based photodetectors have attracted strong interest for their exceptional physical
properties, which include an ultrafast response,, across a broad spectrum, a strong electron …
properties, which include an ultrafast response,, across a broad spectrum, a strong electron …
Metal–Semiconductor–Metal ε-Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism
In recent years, Ga2O3 solar-blind photodetectors (SBPDs) have received great attention for
their potential applications in solar-blind imaging, deep space exploration, confidential …
their potential applications in solar-blind imaging, deep space exploration, confidential …