Achieving high mobility and reliability in atomic layer deposition (ALD)-based IGZO thin-film
transistors (TFTs) with an amorphous phase is vital for practical applications in relevant …

Tungsten oxide (WO3) doped indium oxide (IWO) field-effect transistors (FET), synthesized
using atomic layer deposition (ALD) for three-dimensional integration and back-end-of-line …

Neuromorphic computing systems that mimic the human brain have recently attracted
substantial attention because they allow for the efficient processing of large amounts of data …

With the development of the times, people have higher and higher requirements for
electronic components. Thin film transistor (TFT) is an important switching device that has …

In this article, mechanisms of extremely low OFF-state current and abnormal negative bias
stress (NBS) are systematically investigated by the varying process that contains various gas …

In this letter, self-aligned top-gate (SATG) amorphous In-Ga-Zn-O (a-IGZO) thin-film
transistors (TFTs) with an 8.62-nm SiO 2 gate dielectric grown by conventional plasma …

In this letter, the carrier mobility of amorphous InGaZnO (a-IGZO) thin-film transistor (TFT)
was remarkably enhanced by the introduction of nitrogen and the formation of Zn 3 N 2, in …

In this work, the impact of nitrogen do** (N-do**) on the distribution of sub-gap states in
amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is qualitatively analyzed by …

Magnesium (Mg)-induced metallization of amorphous indium-gallium-zinc-oxide (a-IGZO)
films is investigated to develop a self-aligned (SA) top-gate (SATG) a-IGZO thin-film …

Amorphous oxide semiconductors (AOSs) are receiving increased attention for electronics
requiring low fabrication temperatures, but concerns remain about their stability. Here, we …