In this work, the electronic and spintronic properties of the five various stacking orders of
bilayer MoSeTe, bilayer WSeTe, and MoSeTe/WSeTe van der Waals heterostructure under …

In this work, the electrical and spin properties of monolayer MoSi 2 X 4 (X= N, P, As, and Sb)
under vertical strain are investigated. The band structures show that MoSi 2 N 4 is an …

In this study, the electronic and spin properties of SnX (X= P, As, Sb, Bi) monolayers under
biaxial strain were investigated using density functional theory. The electronic and spin …

The current-induced spin polarization (CISP) in a system without the inversion symmetry is
known to efficiently generate the spin current. In this paper we propose another approach …

Using density functional theory combined with the Boltzmann transport equation, the charge,
thermal transport, and thermoelectric properties in two-dimensional (2D) Ge 2 Y 2 (Y= N, P …

Several conceptual nanodevices based on the four-atom layer α-and β-Ge 2 Sb 2
monolayers are constructed, and their electronic transport and photoelectronic properties …

This paper studies the structural, mechanical, optical, and electronic characteristics of
monolayer and bilayer ABC 3 (Adouble bondGa, In; Bdouble bondSi, Ge; Cdouble bondS …

Transition metal dichalcogenide monolayers exhibit unique properties such as direct
bandgap and light-matter interactions influenced by robust excitons and spin–orbit …

In this work, the electronic, photocatalytic, and spin properties of 2D Janus XMoYZ 2 (X= S,
Se, Te; Y= Si, Ge and Z= N, P) monolayers are studied. The electronic properties are …

Several conceptual nanodevices based on the four-atom-layer α-and β-Ge 2 Y 2 are
constructed, and their electronic transport and photoelectronic properties are revealed by …