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Room temperature energy-efficient spin-orbit torque switching in two-dimensional van der Waals Fe3GeTe2 induced by topological insulators
Abstract Two-dimensional (2D) ferromagnetic materials with unique magnetic properties
have great potential for next-generation spintronic devices with high flexibility, easy …
have great potential for next-generation spintronic devices with high flexibility, easy …
Two‐dimensional van der Waals topological materials: preparation, properties, and device applications
Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including
topological insulators and topological semimetals, which combine atomically flat 2D layers …
topological insulators and topological semimetals, which combine atomically flat 2D layers …
Vertically stacked Bi 2 Se 3/MoTe 2 heterostructure with large band offsets for nanoelectronics
In recent years, two-dimensional material-based tunneling heterojunctions are emerging as
a multi-functional architecture for logic circuits and photodetection owing to the flexible …
a multi-functional architecture for logic circuits and photodetection owing to the flexible …
Magnetotransport and ARPES studies of the topological insulators Sb2Te3 and Bi2Te3 grown by MOCVD on large-area Si substrates
Recently, the topological insulators (TIs) antimony telluride (Sb2Te3) and bismuth telluride
(Bi2Te3) are attracting high interest for applications based on spin-charge interconversion …
(Bi2Te3) are attracting high interest for applications based on spin-charge interconversion …
Recent advances in two-dimensional intrinsic ferromagnetic materials Fe 3 X (X= Ge and Ga) Te 2 and their heterostructures for spintronics
X Chen, X Zhang, G **ang - Nanoscale, 2024 - pubs.rsc.org
Owing to their atomic thicknesses, atomically flat surfaces, long-range spin textures and
captivating physical properties, two-dimensional (2D) magnetic materials, along with their …
captivating physical properties, two-dimensional (2D) magnetic materials, along with their …
Spin-Hall effect due to the bulk states of topological insulators: Extrinsic contribution to the proper spin current
The substantial amount of recent research into spin torques has been accompanied by a
revival of interest in the spin-Hall effect. This effect contributes to the spin torque in many …
revival of interest in the spin-Hall effect. This effect contributes to the spin torque in many …
Challenges and opportunities in searching for Rashba-Dresselhaus materials for efficient spin-charge interconversion at room temperature
Spintronic logic devices require efficient spin-charge interconversion: converting charge
current to spin current and spin current to charge current. In spin–orbit materials that are …
current to spin current and spin current to charge current. In spin–orbit materials that are …
Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb2Te3/Bi2Te3 Topological Insulator Heterostructure for Spin-Charge Conversion
Properly tuning the Fermi level position in topological insulators is of vital importance to
tailor their spin-polarized electronic transport and to improve the efficiency of any functional …
tailor their spin-polarized electronic transport and to improve the efficiency of any functional …
[HTML][HTML] Magnetization switching in van der Waals systems by spin-orbit torque
X Lin, L Zhu - Materials Today Electronics, 2023 - Elsevier
Electrical switching of magnetization via spin-orbit torque is of great potential in fast, dense,
energy-efficient nonvolatile magnetic memory and logic technologies. Recently, enormous …
energy-efficient nonvolatile magnetic memory and logic technologies. Recently, enormous …
Spin transfer torques due to the bulk states of topological insulators
Spin torques at topological insulator (TI)/ferromagnet interfaces have received considerable
attention in recent years with a view towards achieving full electrical manipulation of …
attention in recent years with a view towards achieving full electrical manipulation of …