A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …

JA Spencer, AL Mock, AG Jacobs, M Schubert… - Applied Physics …, 2022 - pubs.aip.org
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …

Indium oxide—a transparent, wide-band gap semiconductor for (opto) electronic applications

O Bierwagen - Semiconductor Science and Technology, 2015 - iopscience.iop.org
The present review takes a semiconductor physics perspective to summarize the state-of-the
art of In 2 O 3 in relation to applications. After discussing conventional and novel …

Direct optical band gap measurement in polycrystalline semiconductors: A critical look at the Tauc method

A Dolgonos, TO Mason, KR Poeppelmeier - Journal of solid state chemistry, 2016 - Elsevier
The direct optical band gap of semiconductors is traditionally measured by extrapolating the
linear region of the square of the absorption curve to the x-axis, and a variation of this …

Group‐III sesquioxides: growth, physical properties and devices

H Von Wenckstern - Advanced Electronic Materials, 2017 - Wiley Online Library
The group‐III sesquioxides possess material properties that render them interesting for
applications such as high‐power rectifiers and transistors, solar‐blind UV detectors and inter …

A computational framework for automation of point defect calculations

A Goyal, P Gorai, H Peng, S Lany… - Computational Materials …, 2017 - Elsevier
A complete and rigorously validated open-source Python framework to automate point
defect calculations using density functional theory has been developed. The framework …

β-(AlxGa1− x) 2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy

SW Kaun, F Wu, JS Speck - Journal of Vacuum Science & Technology …, 2015 - pubs.aip.org
By systematically changing growth parameters, the growth of β-(Al x Ga 1− x) 2 O 3/Ga 2 O 3
(010) heterostructures by plasma-assisted molecular beam epitaxy was optimized. Through …

Bandgap, Mobility, Dielectric Constant, and Baliga's Figure of Merit of 4H-SiC, GaN, and β-Ga2O3 from 300 to 620 K

L Cheng, JY Yang, W Zheng - ACS Applied Electronic Materials, 2022 - ACS Publications
Bandgap, mobility, and dielectric constant are important parameters to measure the
properties of an opto-electric semiconductor material. Here, this work evaluates the …

[HTML][HTML] Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals

Z Galazka, S Ganschow, R Schewski, K Irmscher… - APL Materials, 2019 - pubs.aip.org
Truly bulk ZnGa 2 O 4 single crystals were obtained directly from the melt. High melting point
of 1900±20 C and highly incongruent evaporation of the Zn-and Ga-containing species …

High-temperature optical properties of indium tin oxide thin-films

J Kim, S Shrestha, M Souri, JG Connell, S Park… - Scientific reports, 2020 - nature.com
Indium tin oxide (ITO) is one of the most widely used transparent conductors in
optoelectronic device applications. We investigated the optical properties of ITO thin films at …

In2O3‐Based Transparent Conducting Oxide Films with High Electron Mobility Fabricated at Low Process Temperatures

T Koida, Y Ueno, H Shibata - physica status solidi (a), 2018 - Wiley Online Library
The emerging technological demands for high‐efficiency solar cells and flexible
optoelectronic devices have stimulated research on transparent conducting oxide (TCO) …