Spintronic devices such as magnetic tunnel junctions and skyrmions have attracted
considerable attention due to features such as nonvolatility, high scalability, low power, and …

Light elements having 2p electrons such as B, C, and N are common elements that have
played an important role in various functional materials. In particular, nitrides have long …

Mn 4 N is a typical transition metal nitride with antiperovskite structure. Mn 4 N films and Mn
4 N based heterostructures have attracted much attention for potential applications due to …

Anti-perovskite transition metal nitrides exhibit a variety of magnetic properties—such as
ferromagnetic, ferrimagnetic, and paramagnetic—depending on the 3d transition metal. Fe 4 …

Neural computing, guided by brain-inspired computational frameworks, promises to realize
various cognitive and perception-related tasks. Complementary metal–oxide–semiconductor …

The modulation of magnetic anisotropy is very promising for the realization of energy-
efficient memory devices. In this work, we investigate the effects of interfacial oxidation and …

The interfacial properties between organic molecules and ferromagnetic electrodes
determine the function of organic spintronic devices. Here, we investigate the spin …

Epitaxial Fe 4 N thin films grown on LaAlO 3 (LAO) substrate using sputtering and molecular
beam epitaxy techniques have been studied in this work. Within the sputtering process, films …

In this work, we measured N self-diffusion in the Co-N system and found an unexpected
result that N diffuses out almost completely around 500 K, leaving behind fcc Co irrespective …

Nickel nitride (Ni–N) thin film samples were deposited using reactive magnetron sputtering
process utilizing the different partial flow of N 2 (RN 2). They were characterized using x-ray …