This invaluable book provides a comprehensive treatment of design and applications of
semiconductor optical amplifiers (SOA). SOA is an important component for optical …

The crystal growth of III-V semiconductor compounds has been accomplished by a number
of techniques, including vapor phase epitaxy (VPE),(1, 2, 3) liquid phase epitaxy (LPE),(4 …

The development of InGaAsP lattice-matched to InP as a suitable material for a range of
electronic devices is reviewed. Currently accepted values of fundamental material …

This paper reviews and extends the work done at Varian's Solid State Research Laboratory
on the epitaxial growth of In x Ga 1-x As y P 1-y alloys on InP substrates. Growth of In 0.53 …

A chloride transport vapor phase epitaxial technique has been developed for InGaAsP/InP
heterostructures using the" dual-growth-chamber" method. Two independent growth …

InGaAsP photodiodes are finding wide applications in long wavelength fiber-optical
communication systems. Particular requirements that these detectors must satisfy include …

Crystal growth techniques for the metal chloride-hydride vapor-phase epitaxy of InGaAsP
alloys are described. The growth conditions and gas flows for alloys with energy bandgap …

Vapor-phase epitaxial growth oflno. 53G~ 47As lattice matched to (100)-oriented InP
substrates is described, and the performance of photodiodes fabricated from this material is …

The vapor phase epitaxial growth of InAs x P 1− x alloys on InP substrates using the hydride
process is described. Growth conditions for lattice-matched In 1− y Ga y As epitaxial layers …

The heterogeneous equilibrium in the InGaAsP/HCl/H2 system has been studied at pressure
and temperature conditions pertaining to the hydride-VPE growth. The results have been …