Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs
In this letter, we report a detailed experimental investigation of the time-dependent
breakdown induced by forward gate stress in GaN-based power HEMTs with a p-type gate …
breakdown induced by forward gate stress in GaN-based power HEMTs with a p-type gate …
Analysis of the gate capacitance–voltage characteristics in p-GaN/AlGaN/GaN heterostructures
In this letter, we analyzed the gate capacitance characteristics in p-GaN gate/AlGaN/GaN
heterostructures by using a two-junction capacitor model. First, we have observed that the …
heterostructures by using a two-junction capacitor model. First, we have observed that the …
Evaluation of the switching characteristics of a gallium-nitride transistor
Gallium-nitride (GaN) technology for power conversion is maturing, with a growing need to
evaluate the capabilities of GaN devices in high switching frequency and elevated ambient …
evaluate the capabilities of GaN devices in high switching frequency and elevated ambient …
Enhancement-mode 300-mm GaN-on-Si (111) with integrated Si CMOS for future mm-wave RF applications
A 300-mm GaN-on-Si (111) high-gate dielectric E-mode GaN MOSHEMT technology is
demonstrated with uniform process and wafer characteristics. The E-mode GaN MOSHEMT …
demonstrated with uniform process and wafer characteristics. The E-mode GaN MOSHEMT …
Trap** mechanisms in GaN‐based MIS‐HEMTs grown on silicon substrate
In this work we report on the three dominant trap** mechanisms affecting the dynamic
performance of a double‐heterostructure GaN‐based MIS‐HEMT grown on silicon …
performance of a double‐heterostructure GaN‐based MIS‐HEMT grown on silicon …
Comprehensive study of the complex dynamics of forward bias-induced threshold voltage drifts in GaN based MIS-HEMTs by stress/recovery experiments
P Lagger, M Reiner, D Pogany… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
The transient recovery characteristics of the threshold voltage drift (ΔV th) of GaN-based
HEMTs with a SiO 2 gate dielectric induced by forward gate bias stress are systematically …
HEMTs with a SiO 2 gate dielectric induced by forward gate bias stress are systematically …
Unified mechanism for positive-and negative-bias temperature instability in GaN MOSFETs
A Guo, JA del Alamo - IEEE Transactions on Electron Devices, 2017 - ieeexplore.ieee.org
We present a comprehensive study of bias temperature instability (BTI) in GaN MOSFETs
under moderate positive and negative gate bias stress. We investigate the evolution of …
under moderate positive and negative gate bias stress. We investigate the evolution of …
Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates
B De Jaeger, M Van Hove, D Wellekens… - … Devices and ICs, 2012 - ieeexplore.ieee.org
Au-free CMOS-compatible AlGaN/GaN HEMT devices have been processed on 200 mm Si
substrates u sing a typical CMOS tool set. This paper addresses the challenges with respect …
substrates u sing a typical CMOS tool set. This paper addresses the challenges with respect …
Machine learning-based statistical approach to analyze process dependencies on threshold voltage in recessed gate AlGaN/GaN MIS-HEMTs
In this work, we demonstrate the use of a machine learning (ML)-based statistical approach
to model and analyze the impact of the fabrication processes on the threshold voltage in …
to model and analyze the impact of the fabrication processes on the threshold voltage in …
Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application
YC Lin, YX Huang, GN Huang, CH Wu… - IEEE Electron …, 2017 - ieeexplore.ieee.org
This letter reports an E-mode GaN MIS-HEMT using a composite La 2 O 3/HfO 2 gate
insulator for power device applications. The composite dielectric formed an amorphous …
insulator for power device applications. The composite dielectric formed an amorphous …