InAs/(In, Ga) Sb type‐II strained layer superlattices (T2SLs) have made significant progress
since they were first proposed as an infrared (IR) sensing material more than three decades …

Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double
quantum wells (DQWs) have a unique double-layered structure with electron and hole …

We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb
quantum wells, in which the bulk gaps are enhanced up to fivefold as compared to the …

We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a
topological insulator. The transition is induced by decreasing the degree of band inversion …

We present transport measurements performed in InAs/GaSb double quantum wells. At the
electron-hole crossover tuned by a gate voltage, a strong increase in the longitudinal …

Quantum spin Hall insulators (QSHIs), also known as two-dimensional topological
insulators, have emerged as an unconventional class of quantum states with insulating bulk …

In an ideal InAs/GaSb bilayer of appropriate dimension, in-plane electron and hole bands
overlap and hybridize, and a topologically nontrivial, or quantum spin Hall (QSH) insulator …

We report here our recent electron transport results in spatially separated two-dimensional
electron and hole gases with nominally degenerate energy subbands, realized in an InAs …

Direct current (DC) transport and far infrared photoresponse were studied an InAs/GaSb
double quantum well with an inverted band structure. The DC transport depends …

We present our recent electronic transport results in top-gated InAs/GaSb quantum well
hybrid structures with superconducting Ta electrodes. We show that the transport across the …