Recent progress in voltage control of magnetism: Materials, mechanisms, and performance

C Song, B Cui, F Li, X Zhou, F Pan - Progress in Materials Science, 2017 - Elsevier
Voltage control of magnetism (VCM) is attracting increasing interest and exciting significant
research activity driven by its profound physics and enormous potential for application. This …

Electric field control of magnetism in multiferroic heterostructures

CAF Vaz - Journal of Physics: Condensed Matter, 2012 - iopscience.iop.org
We review the recent developments in the electric field control of magnetism in multiferroic
heterostructures, which consist of heterogeneous materials systems where a …

Electric-field control of magnetism via strain transfer across ferromagnetic/ferroelectric interfaces

T Taniyama - Journal of Physics: Condensed Matter, 2015 - iopscience.iop.org
By taking advantage of the coupling between magnetism and ferroelectricity, ferromagnetic
(FM)/ferroelectric (FE) multiferroic interfaces play a pivotal role in manipulating magnetism …

Manipulation of magnetic coercivity of Fe film in Fe/BaTiO3 heterostructure by electric field

G Venkataiah, Y Shirahata, M Itoh… - Applied Physics …, 2011 - pubs.aip.org
The manipulation of magnetism at Fe/BaTiO 3 interfaces is demonstrated via lattice
distortion induced by thermal and electrical means. We find that the magnetic coercivity …

Phase formation, microstructure, electrical and magnetic properties of Mn substituted barium titanate

A Rani, J Kolte, P Gopalan - Ceramics International, 2015 - Elsevier
Mn doped barium titanate (BaTi 1− x Mn x O 3) ceramics with x= 0, 1, 2.5, 5, 7.5 and 10%
have been synthesized by a solid state reaction method. X-Ray Diffraction (XRD) patterns …

Electrical and optical spin injection in ferromagnet/semiconductor heterostructures

T Taniyama, E Wada, M Itoh, M Yamaguchi - NPG Asia Materials, 2011 - nature.com
Spin-based electronics or 'spintronics' is a rapidly expanding research area that offers the
promise of surpassing the limits of conventional electrical charge-based semiconductor …

Electrically controlled non-volatile switching of magnetism in multiferroic heterostructures via engineered ferroelastic domain states

M Liu, T Nan, JM Hu, SS Zhao, Z Zhou, CY Wang… - NPG Asia …, 2016 - nature.com
In this work we addressed a key challenge in realizing multiferroics-based reconfigurable
magnetic devices, which is the ability to switch between distinct collective magnetic states in …

Strong magnetoelectric coupling in multiferroic Co/BaTiO thin films

N Jedrecy, HJ Von Bardeleben, V Badjeck… - Physical Review B …, 2013 - APS
We have found evidence for a strong magnetoelectric (ME) coupling at room temperature
between polycrystalline Co layers (5− 40 nm) and single-crystalline (001)-oriented BaTiO 3 …

[HTML][HTML] Artificial multiferroic heterostructures for an electric control of magnetic properties

V Garcia, M Bibes, A Barthélémy - Comptes Rendus Physique, 2015 - Elsevier
The control of magnetism by electric fields is an important goal for future low-power
spintronics devices. This partly explains the intensified recent interest for magnetoelectric …