Spins in few-electron quantum dots

R Hanson, LP Kouwenhoven, JR Petta, S Tarucha… - Reviews of modern …, 2007 - APS
The canonical example of a quantum-mechanical two-level system is spin. The simplest
picture of spin is a magnetic moment pointing up or down. The full quantum properties of …

Quantum transport in Rashba spin–orbit materials: a review

D Bercioux, P Lucignano - Reports on Progress in Physics, 2015 - iopscience.iop.org
In this review article we describe spin-dependent transport in materials with spin–orbit
interaction of Rashba type. We mainly focus on semiconductor heterostructures, however we …

Gate-controlled spin-orbit quantum interference effects in lateral transport

JB Miller, DM Zumbühl, CM Marcus, YB Lyanda-Geller… - Physical review …, 2003 - APS
In situ control of spin-orbit coupling in coherent transport using a clean G a A s/A l G a A s
two-dimensional electron gas is realized, leading to a gate-tunable crossover from weak …

Large magnetoresistance in nonmagnetic -conjugated semiconductor thin film devices

Ö Mermer, G Veeraraghavan, TL Francis, Y Sheng… - Physical Review B …, 2005 - APS
Following the recent observation of large magnetoresistance at room temperature in
polyfluorene sandwich devices, we have performed a comprehensive magnetoresistance …

Large magnetoresistance at room temperature in semiconducting polymer sandwich devices

TL Francis, Ö Mermer, G Veeraraghavan… - New Journal of …, 2004 - iopscience.iop.org
We report on the discovery of a large, room temperature magnetoresistance (MR) effect in
polyfluorene sandwich devices in weak magnetic fields. We characterize this effect and …

Electrical control of spin relaxation in a quantum dot

S Amasha, K MacLean, IP Radu, DM Zumbühl… - Physical review …, 2008 - APS
We demonstrate electrical control of the spin relaxation time T 1 between Zeeman-split spin
states of a single electron in a lateral quantum dot. We find that relaxation is mediated by the …

Constructed Ge quantum dots and Sn precipitate SiGeSn hybrid film with high thermoelectric performance at low temperature region

Y Peng, L Miao, C Liu, H Song… - Advanced Energy …, 2022 - Wiley Online Library
SiGe‐based thermoelectric (TE) materials are well‐known for high‐temperature utilization,
but rarely relevant in the low temperature region. Here a Ge quantum dots (QDs) and Sn …

Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot

LC Camenzind, L Yu, P Stano, JD Zimmerman… - Nature …, 2018 - nature.com
Understanding and control of the spin relaxation time T 1 is among the key challenges for
spin-based qubits. A larger T 1 is generally favored, setting the fundamental upper limit to …

Spin relaxation in InAs nanowires studied by tunable weak antilocalization

AE Hansen, MT Björk, C Fasth, C Thelander… - Physical Review B …, 2005 - APS
We report on a low-temperature magnetoconductance study to characterize the electrical
and spin transport properties of n-type InAs nanowires grown by chemical beam epitaxy. A …

Symmetry of Spin-Orbit Coupling and Weak Localization in Graphene

E McCann, VI Fal'ko - Physical review letters, 2012 - APS
We show that the influence of spin-orbit (SO) coupling on the weak-localization effect for
electrons in graphene depends on the lack or presence of z→-z symmetry in the system …