The fundamental understanding of quantum dot (QD) growth mechanism is essential to
improve QD based optoelectronic devices. The size, shape, composition, and density of the …

In this article we review the extensive experimental work on the compositional map** of
semiconductor quantum dots and rings. After a brief introduction of the various experimental …

The lowest five energies levels (ELs) and optical absorption coefficient (OAC) of confined
donor in a core/shell ellipsoidal quantum dot were theoretically investigated under the …

The Sb-induced changes in the optical properties of GaAsSb-capped InAs/GaAs quantum
dots (QDs) are shown to be strongly correlated with structural changes. The observed …

Epitaxially grown self-assembled semiconductor quantum dots (QDs) with atom-like optical
properties have emerged as the best choice for single-photon sources required for the …

Abstract The Stranski–Krastanov growth-mode facilitates the self-assembly of quantum dots
(QDs) by using lattice-mismatched semiconductors, for instance, InAs and GaAs. These QDs …

We investigated metal-organic vapor phase epitaxy grown (InGa)(AsSb)/GaAs/GaP Stranski–
Krastanov quantum dots (QDs) with potential applications in QD-Flash memories by cross …

In this work, two different strategies to preserve InAs/GaAs QDs against decomposition
during the cap** process have been compared structurally and optically. They are based …

The biexciton, negative and positive trion states in strongly oblate ellipsoidal quantum dot
are investigated in the framework of variational method and Heisenberg's uncertainty …

Linear and nonlinear optical properties of In x Ga 1-x As/GaAs lens-shaped quantum dots
were investigated, taking into account simultaneous effects of indium segregation, In/Ga …