Radiation‐tolerant electronic devices using wide bandgap semiconductors
The aspiration of electronic technologies that are resistant to high‐energy cosmic radiation
is essential for current harsh radiation environment exploration. Integrated circuits mostly …
is essential for current harsh radiation environment exploration. Integrated circuits mostly …
[HTML][HTML] Review of Radiation-Induced Effects on β-Ga2O3 Materials and Devices
β-Ga2O3 has become an ultimate choice of emerging new-generation material for its wide
range of compelling applications in power electronics. In this review, we have explored the …
range of compelling applications in power electronics. In this review, we have explored the …
Ionizing radiation damage effects on GaN devices
Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high
power and high frequency applications, with higher breakdown voltages and two …
power and high frequency applications, with higher breakdown voltages and two …
High-performance radiation stable ZnO/Ag/ZnO multilayer transparent conductive electrode
The present study reports the fabrication and performance of swift heavy ion (SHI) irradiated
transparent conducting electrode (TCE) having oxide-metal-oxide multilayer structure; …
transparent conducting electrode (TCE) having oxide-metal-oxide multilayer structure; …
Gamma irradiation effect on performance of β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors for space applications
The radiation hardness of Ni/Ga 2 O 3/Ni metal-semiconductor-metal (MSM) solar blind
photodetectors has been investigated under the exposure of 60 Co γ-source. It was …
photodetectors has been investigated under the exposure of 60 Co γ-source. It was …
Enhanced charge collection by single ion strike in AlGaN/GaN HEMTs
S Onoda, A Hasuike, Y Nabeshima… - … on Nuclear Science, 2013 - ieeexplore.ieee.org
Transient currents in AlGaN/GaN High Electron Mobility Transistors (HEMTs) induced by
focused ion beams are measured. Enhanced charge collection occurs in the on-and pinch …
focused ion beams are measured. Enhanced charge collection occurs in the on-and pinch …
The effect of Gamma irradiation on the stability of amorphous InGaZnO metal-semiconductor-metal UV photodetectors
CY Huang - Journal of Non-Crystalline Solids, 2020 - Elsevier
Crystalline semiconductors are durable, but are susceptible to damage by radiation. This
study irradiates amorphous InGaZnO (a-IGZO) metal-semiconductor-metal (MSM) …
study irradiates amorphous InGaZnO (a-IGZO) metal-semiconductor-metal (MSM) …
Comparing the effect between room temperature and low temperature heavy ion irradiation by deep level transient spectroscopy
X Gao, X Wang, Y Li, Z Yang, M Gong, M Huang… - Nuclear Instruments and …, 2024 - Elsevier
To promote the application of SiC devices in extreme environments, the irradiation damages
of 4H-SiC Schottky barrier diodes (SBDs) irradiated with 6 MeV Au ions under room …
of 4H-SiC Schottky barrier diodes (SBDs) irradiated with 6 MeV Au ions under room …
Electronic excitation induced defect dynamics in HfO2 based MOS devices investigated by in-situ electrical measurements
In-situ IV and CV characterization studies were carried out to determine the device quality of
atomic layer deposited HfO 2 (2.7 nm)/SiO 2 (0.6 nm)/Si-based metal oxide semiconductor …
atomic layer deposited HfO 2 (2.7 nm)/SiO 2 (0.6 nm)/Si-based metal oxide semiconductor …
In-situ transport and microstructural evolution in GaN Schottky diodes and epilayers exposed to swift heavy ion irradiation
A systematic investigation of radiation hardness of Schottky barrier diodes and GaN epitaxial
layers is carried out by employing in-situ electrical resistivity and cross sectional …
layers is carried out by employing in-situ electrical resistivity and cross sectional …