In this review article, a comprehensive study of the mechanisms of Ohmic contact formation
on GaN-based materials is presented. After a brief introduction on the physics of Ohmic …

This paper reviews the device physics and technology of optoelectronic devices based on
semiconductors of the GaN family, operating in the spectral regions from deep UV to …

Ultraviolet light emitting diodes (UV LEDs) are one of the most promising technologies for
preventing future pandemics, improving health outcomes, and disinfecting water sources …

GaN and related III–V nitrides have been applied to realize optoelectronic devices, such as
light emitting diodes, ultraviolet photodetectors, and laser diodes. 1 They have been …

В настоящее время в мире интенсивно развиваются полупроводниковые
фотоэлектропреобразователи для ультрафиолетовой (УФ) области спектра в связи с …

The authors report on the formation and evaluation of V-based Ohmic contacts to n-Al Ga N
films in the entire alloy composition. The films were produced by plasma assisted molecular …

AlGaN based deep ultraviolet (DUV) light-emitting diodes (LEDs), especially with a
wavelength below 250 nm, have great application potential in the fields of sterilization and …

With the continuous improvement of the power density and operating frequency in power
conversion systems, it is necessary to develop the new power electronic products with better …

Ohmic contact formation by Ti∕ Al∕ Mo∕ Au⁠, Mo∕ Al∕ Mo∕ Au⁠, and V∕ Al∕ Mo∕
Au on Al Ga N∕ Ga N heterostructure field effect transistor layers have been studied and …

Highly conductive silicon-doped AlGaN and ohmic contacts are needed for deep-UV LEDs
and ultrawide bandgap electronics. We demonstrate improved n-Al0. 65Ga0. 35N films …