Wet etching of GaN, AlN, and SiC: a review
D Zhuang, JH Edgar - Materials Science and Engineering: R: Reports, 2005 - Elsevier
The wet etching of GaN, AlN, and SiC is reviewed including conventional etching in
aqueous solutions, electrochemical etching in electrolytes and defect-selective chemical …
aqueous solutions, electrochemical etching in electrolytes and defect-selective chemical …
Zinc oxide light-emitting diodes: a review
F Rahman - Optical Engineering, 2019 - spiedigitallibrary.org
This paper presents a compact survey of the various material schemes and device structures
that have been explored in the quest toward develo** light-emitting diodes (LEDs) based …
that have been explored in the quest toward develo** light-emitting diodes (LEDs) based …
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
Roughened surfaces of light-emitting diodes (LEDs) provide substantial improvement in light
extraction efficiency. By using the laser-lift-off technique followed by an anisotropic etching …
extraction efficiency. By using the laser-lift-off technique followed by an anisotropic etching …
Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications
With the increasing requirements for microelectromechanical systems (MEMS) regarding
stability, miniaturization and integration, novel materials such as wide band gap …
stability, miniaturization and integration, novel materials such as wide band gap …
Gallium nitride as an electromechanical material
Gallium nitride (GaN) is a wide bandgap semiconductor material and is the most popular
material after silicon in the semiconductor industry. The prime movers behind this trend are …
material after silicon in the semiconductor industry. The prime movers behind this trend are …
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surface
T Fujii, Y Gao, EL Hu, S Nakamura - US Patent 7,704,763, 2010 - Google Patents
A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a
nitrogen face (N-face)(42) of the LED and a surface of the N-face (42) is roughened into one …
nitrogen face (N-face)(42) of the LED and a surface of the N-face (42) is roughened into one …
GaN nanotip pyramids formed by anisotropic etching
We experimentally demonstrate the formation of GaN nanotip pyramids by selective and
anisotropic etching of N-polar GaN in KOH solution. For samples grown with adjacent Ga …
anisotropic etching of N-polar GaN in KOH solution. For samples grown with adjacent Ga …
Microstructure and origin of dislocation etch pits in GaN epilayers grown by metal organic chemical vapor deposition
L Lu, ZY Gao, B Shen, FJ Xu, S Huang… - Journal of Applied …, 2008 - pubs.aip.org
Morphology and microstructure of dislocation etch pits in GaN epilayers etched by molten
KOH have been investigated by atomic force microscopy, scanning electron microscopy …
KOH have been investigated by atomic force microscopy, scanning electron microscopy …
Comparative analysis of the GaN nonpolar plane morphology by wet treatment and its effect on electrical properties in trench MOSFET
J Zhou, W Tang, T Ju, H Wang, G Yu… - … Applied Materials & …, 2023 - ACS Publications
The morphological characteristics of the GaN nonpolar sidewalls with different crystal plane
orientations were studied under various TMAH wet treatment conditions, and the effect of …
orientations were studied under various TMAH wet treatment conditions, and the effect of …