N-polar GaN epitaxy and high electron mobility transistors
This paper reviews the progress of N-polar ($000\mathop 1\limits^\_ $) GaN high frequency
electronics that aims at addressing the device scaling challenges faced by GaN high …
electronics that aims at addressing the device scaling challenges faced by GaN high …
N-polar GaN: Epitaxy, properties, and device applications
Abstract In recent years, Gallium Nitride (GaN) has been established as a material of choice
for high power switching, high power RF and lighting applications. In c-direction, depending …
for high power switching, high power RF and lighting applications. In c-direction, depending …
GaN high electron mobility transistors for sub-millimeter wave applications
This paper reviews different technologies recently developed to push the performance of
GaN-based high electron mobility transistors (HEMTs) into sub-mm wave frequencies. To …
GaN-based high electron mobility transistors (HEMTs) into sub-mm wave frequencies. To …
Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V fmax· VBK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates
In this work, ultrathin barrier (∼ 6 nm) AlGaN/GaN high-electron-mobility transistors
(HEMTs) with in situ SiN gate dielectric and slant-field plate (SFP) T-gates were fabricated …
(HEMTs) with in situ SiN gate dielectric and slant-field plate (SFP) T-gates were fabricated …
A High RF-Performance AlGaN/GaN HEMT With Ultrathin Barrier and Stressor In Situ SiN
The submicrometer gate HEMT is fabricated with an ultrathin-barrier (UTB) AlGaN/gallium
nitride (GaN) combined with in situ SiN passivation. The sheet resistance of the UTB Al 0.2 …
nitride (GaN) combined with in situ SiN passivation. The sheet resistance of the UTB Al 0.2 …
[BOOK][B] Nitride wide bandgap semiconductor material and electronic devices
Y Hao, JF Zhang, JC Zhang - 2016 - taylorfrancis.com
This book systematically introduces physical characteristics and implementations of III-
nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on …
nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on …
Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With In Situ SiNx Gate Dielectric
This paper reports on the fabrication and characterization of gate-last self-aligned in situ SiN
x/AlN/GaN MISHEMTs. The devices featured in situ grown SiN x by metal–organic chemical …
x/AlN/GaN MISHEMTs. The devices featured in situ grown SiN x by metal–organic chemical …
Anomalous output conductance in N-polar GaN high electron mobility transistors
An anomalous output conductance that resembled short-channel effects was observed in
long-channel N-polar GaN-channel/AlGaN-back-barrier/GaN-buffer high electron mobility …
long-channel N-polar GaN-channel/AlGaN-back-barrier/GaN-buffer high electron mobility …
N-polar III-nitride transistors
This chapter reviews the historical development and present status of N-polar 000 1¯ GaN
high electron mobility transistors (HEMTs) that aim at addressing the device scaling …
high electron mobility transistors (HEMTs) that aim at addressing the device scaling …
Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor …
Different back barrier designs comprising of AlN, AlGaN, and InAlN layers are investigated
for ultra-thin GaN channel N-polar high-electron-mobility-transistors grown by metalorganic …
for ultra-thin GaN channel N-polar high-electron-mobility-transistors grown by metalorganic …