A photodetector (PD) converts optical signals into electrical ones and is widely used in
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …

Silicon photonics is widely used for near InfraRed (IR) applications up to 1.6 µm. It plays a
key role in short-range optical data communications. However, silicon photonics does not …

Germanium–tin (Ge1–x Sn x) semiconductors are a front-runner platform for compact mid-
infrared devices due to their tunable narrow bandgap and compatibility with silicon …

Expanding the optical communication band is one of the most effective methods of
overcoming the nonlinear Shannon capacity limit of single fiber. In this study, GeSn …

There is an increasing need for silicon-compatible high-bandwidth extended-short wave
infrared (e-SWIR) photodetectors (PDs) to implement cost-effective and scalable …

Te x Se1–x shortwave infrared (SWIR) photodetectors show promise for monolithic
integration with readout integrated circuits (ROIC), making it a potential alternative to …

Silicon-compatible short-and midwave infrared emitters are highly sought after for on-chip
monolithic integration of electronic and photonic circuits to serve a myriad of applications in …

High-responsivity and low dark current resonant-cavity-enhanced (RCE) Ge PIN
photodiodes with a monolayer graphene absorber were demonstrated on a 200 mm …

Monolithic integration of extended short-wave infrared photodetectors (PDs) on silicon is
highly sought-after to implement manufacturable, cost-effective sensing and imaging …

Silicon (Si)-based mid-infrared (MIR) photonics has promising potential for realizing next-
generation ultra-compact spectroscopic systems for various applications such as label-free …