Indium gallium nitride (InGaN)-based light-emitting diodes (LEDs) are considered a
promising candidate for red-green-blue (RGB) micro displays. Currently, the blue and green …

InGaN-based LEDs are efficient light sources in the blue–green light range and have been
successfully commercialized in the last decades. Extending their spectral range to the red …

Here, we report highly efficient InGaN-based red light-emitting diodes (LEDs) grown on
conventional c-plane-patterned sapphire substrates. An InGaN single quantum well active …

We investigated the performance of InGaN-based red/green micro-light-emitting diodes
(µLEDs) ranging from 98× 98 µ m 2 to 17× 17 µ m 2. The average forward voltage at 10 A/cm …

We investigated the effect of the sidewall passivation by hydrogen plasma on the InGaN
green micro-LED performance. Hydrogen passivation deactivates the surface region of p …

We demonstrated amber InGaN micro-light-emitting diodes (LEDs) with the peak
wavelength of 606 nm and full-width at maximum (FWHM) of 50 nm at 20 A/cm 2. The amber …

We demonstrated 10× 10 arrays of InGaN 17 μm× 17 μm micro-light-emitting diodes
(μLEDs) with a peak wavelength from 662 to 630 nm at 10–50 A/cm^ 2. The on-wafer …

We investigated the effects of size on electrical and optical properties of InGaN-based red
light-emitting diodes (LEDs) by designing rectangular chips with different mesa lengths …

Transparent conducting oxide thin films have been extensively studied for various
optoelectronic devices. In this paper, we investigated the influence of substrate temperature …

This study demonstrated InGaN-based amber micro-light-emitting diodes (LEDs) with
varying Al contents of 2%, 5%, and 16% in barriers. The LEDs with Al GaN in barriers …