Comparative analysis of low-frequency noise based resistive switching phenomenon for filamentary and interfacial RRAM devices
JK Lee, S Kim - Chaos, Solitons & Fractals, 2023 - Elsevier
We investigate the low-frequency noise (LFN) characteristics of resistive switching random
access memory (RRAM) devices with metal–insulator–metal structures of TiN/Ti/TiO 2/TiN …
access memory (RRAM) devices with metal–insulator–metal structures of TiN/Ti/TiO 2/TiN …
Effect of annealing treatment on the microstructure and current carrying tribological properties of in-situ formed TiO2− x coating prepared by plasma spraying
P Wang, G Ma, F Su, W Guo, S Chen, H Zhao, M Liu… - Tribology …, 2022 - Elsevier
Abstract Titanium suboxide (TiO 2− x) of Magnéli phases was in-situ formed by using
supersonic plasma spraying with the agglomerated TiO 2 powders. The effect of annealing …
supersonic plasma spraying with the agglomerated TiO 2 powders. The effect of annealing …
Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure
Post-metal annealing temperature-dependent forming-free resistive switching memory
characteristics, Fowler-Nordheim (FN) tunneling at low resistance state, and after reset using …
characteristics, Fowler-Nordheim (FN) tunneling at low resistance state, and after reset using …
NiO-based resistive memory devices with highly improved uniformity boosted by ionic liquid pre-treatment
X Kang, J Guo, Y Gao, S Ren, W Chen, X Zhao - Applied Surface Science, 2019 - Elsevier
Uniformity of memory switching parameters is a critical issue in the application of resistance
random access memory (RRAM). Herein, we report a resistive memory device based on a …
random access memory (RRAM). Herein, we report a resistive memory device based on a …
Self-rectifying resistive switching behavior observed in Al2O3-based resistive switching memory devices with p-AlGaN semiconductor bottom electrode
In this work, self-rectifying unipolar resistive switching (RS) behavior is demonstrated in Al 2
O 3-based resistive random access memory (RRAM) devices by employing wide bandgap …
O 3-based resistive random access memory (RRAM) devices by employing wide bandgap …
Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure
Understanding of resistive switching mechanism through H 2 O 2 sensing and improvement
of switching characteristics by using TaO x-based material in W/Al 2 O 3/TaO x/TiN structure …
of switching characteristics by using TaO x-based material in W/Al 2 O 3/TaO x/TiN structure …
Growth of amorphous, anatase and rutile phase TiO2 thin films on Pt/TiO2/SiO2/Si (SSTOP) substrate for resistive random access memory (ReRAM) device application
Memory structures play a basic role in providing integrated circuits of powerful processing
capabilities. Even most powerful processors have nothing to offer without an accompanying …
capabilities. Even most powerful processors have nothing to offer without an accompanying …
Neuromorphic dynamics at the nanoscale in silicon suboxide RRAM
Resistive random-access memories, also known as memristors, whose resistance can be
modulated by the electrically driven formation and disruption of conductive filaments within …
modulated by the electrically driven formation and disruption of conductive filaments within …
Bipolar resistive switching in Si/Ag nanostructures
Resistive switching devices are being intensively studied aiming a large number of
promising applications such as nonvolatile memories, artificial neural networks and sensors …
promising applications such as nonvolatile memories, artificial neural networks and sensors …
Effects of heterogeneity and prestress field on phonon properties of semiconductor nanofilms
J Wang, L Zhu, W Yin - Computational Materials Science, 2018 - Elsevier
The phonon dispersion relation, phonon group velocity and phonon density of state in GaN-
based wurtzite nanofilms under prestress fields are investigated theoretically. Considering …
based wurtzite nanofilms under prestress fields are investigated theoretically. Considering …