Metal-assisted chemical etching of silicon and the behavior of nanoscale silicon materials as Li-ion battery anodes
This review outlines the developments and recent progress in metal-assisted chemical
etching of silicon, summarizing a variety of fundamental and innovative processes and …
etching of silicon, summarizing a variety of fundamental and innovative processes and …
Sputtered NiOx films for stabilization of p+ n-InP photoanodes for solar-driven water oxidation
A reactively sputtered NiOx film has been used here to stabilize a buried-junction p+ n-InP
photoanode from anodic dissolution/corrosion for> 48 h of continuous light-driven evolution …
photoanode from anodic dissolution/corrosion for> 48 h of continuous light-driven evolution …
Dependence of the threshold voltage in indium-phosphide pore formation on the electrolyte composition
Results of the experimental determination of the threshold voltage of pore formation for n-InP
(100) crystals with a charge-carrier density of 2.3× 10 18 cm− 3 are presented. The threshold …
(100) crystals with a charge-carrier density of 2.3× 10 18 cm− 3 are presented. The threshold …
Blue shift of photoluminescence spectrum of porous InP
The samples of porous InP were grown up by a method of anode etching on a substrate
(100) InP n-type. The samples were characterized by SEM and photoluminescence (PL) …
(100) InP n-type. The samples were characterized by SEM and photoluminescence (PL) …
[HTML][HTML] Electrochemical pore formation onto semiconductor surfaces
In this paper, a review on electrochemical porous etching of semiconductors is proposed.
After a brief history, chemical and electrochemical etching of semiconductors are considered …
After a brief history, chemical and electrochemical etching of semiconductors are considered …
An Investigation by AFM and TEM of the Mechanism of Anodic Formation of Nanoporosity in n-InP in KOH
The early stages of nanoporous layer formation, under anodic conditions in the absence of
light, were investigated for n-type InP with a carrier concentration of in KOH and a …
light, were investigated for n-type InP with a carrier concentration of in KOH and a …
Propagation of nanopores during anodic etching of n-InP in KOH
We propose a three-step model of electrochemical nanopore formation in n-InP in KOH that
explains how crystallographically oriented etching can occur even though the rate …
explains how crystallographically oriented etching can occur even though the rate …
Pore propagation directions and nanoporous domain shape in n-InP anodized in KOH
Pore propagation during anodization of (100) n-InP electrodes in aqueous KOH was studied
in detail by scanning and transmission electron microscopy (SEM and TEM). Pores …
in detail by scanning and transmission electron microscopy (SEM and TEM). Pores …
Do** controlled roughness and defined mesoporosity in chemically etched silicon nanowires with tunable conductivity
By using Si (100) with different dopant type (n++-type (As) or p-type (B)), we show how metal-
assisted chemically etched (MACE) nanowires (NWs) can form with rough outer surfaces …
assisted chemically etched (MACE) nanowires (NWs) can form with rough outer surfaces …
Nanoporous domains in n-InP anodized in KOH
A model of porous structure growth in semiconductors based on propagation of pores along
the< 111> A directions has been developed. The model predicts that pores originating at a …
the< 111> A directions has been developed. The model predicts that pores originating at a …