The electrical behaviors of grain boundaries in polycrystalline optoelectronic materials

Z Gao, C Leng, H Zhao, X Wei, H Shi… - Advanced …, 2024 - Wiley Online Library
Polycrystalline optoelectronic materials are widely used for photoelectric signal conversion
and energy harvesting and play an irreplaceable role in the semiconductor field. As an …

Advanced electron microscopy for advanced materials

G Van Tendeloo, S Bals, S Van Aert… - Advanced …, 2012 - Wiley Online Library
The idea of this Review is to introduce newly developed possibilities of advanced electron
microscopy to the materials science community. Over the last decade, electron microscopy …

Local crystal misorientation influences non-radiative recombination in halide perovskites

S Jariwala, H Sun, GWP Adhyaksa, A Lof… - Joule, 2019 - cell.com
We use ultrasensitive electron backscatter diffraction (EBSD) to map the local crystal
orientations, grains, and grain boundaries in CH 3 NH 3 PbI 3 (MAPI) perovskite thin films …

Nanoscale strain-induced pair suppression as a vortex-pinning mechanism in high-temperature superconductors

A Llordes, A Palau, J Gázquez, M Coll, R Vlad… - Nature materials, 2012 - nature.com
Boosting large-scale superconductor applications require nanostructured conductors with
artificial pinning centres immobilizing quantized vortices at high temperature and magnetic …

Unveiling of interstice-occupying dopant segregation at grain boundaries in perovskite oxide dielectrics for a new class of ceramic capacitors

JS An, HS Lee, P Byeon, D Kim, HB Bae… - Energy & …, 2023 - pubs.rsc.org
When aliovalent foreign cations are doped into ABO3-type perovskite oxides, they are
usually substituted for either dodecahedral A or octahedral B sites, depending on their …

Role of Defects in the Phase Transition of VO2 Nanoparticles Probed by Plasmon Resonance Spectroscopy

K Appavoo, DY Lei, Y Sonnefraud, B Wang… - Nano …, 2012 - ACS Publications
Defects are known to affect nanoscale phase transitions, but their specific role in the metal-to-
insulator transition in VO2 has remained elusive. By combining plasmon resonance …

Atom-resolved imaging of ordered defect superstructures at individual grain boundaries

Z Wang, M Saito, KP McKenna, L Gu, S Tsukimoto… - Nature, 2011 - nature.com
The ability to resolve spatially and identify chemically atoms in defects would greatly
advance our understanding of the correlation between structure and property in materials …

The potential for Bayesian compressive sensing to significantly reduce electron dose in high-resolution STEM images

A Stevens, H Yang, L Carin, I Arslan, ND Browning - Microscopy, 2014 - academic.oup.com
The use of high-resolution imaging methods in scanning transmission electron microscopy
(STEM) is limited in many cases by the sensitivity of the sample to the beam and the onset of …

Atomic number dependence of Z contrast in scanning transmission electron microscopy

S Yamashita, J Kikkawa, K Yanagisawa, T Nagai… - Scientific reports, 2018 - nature.com
Annular dark-field (ADF) imaging by scanning transmission electron microscopy (STEM) is a
common technique for material characterization with high spatial resolution. It has been …

Atomically ordered solute segregation behaviour in an oxide grain boundary

B Feng, T Yokoi, A Kumamoto, M Yoshiya… - Nature …, 2016 - nature.com
Grain boundary segregation is a critical issue in materials science because it determines the
properties of individual grain boundaries and thus governs the macroscopic properties of …