[HTML][HTML] Spintronics based random access memory: a review

S Bhatti, R Sbiaa, A Hirohata, H Ohno, S Fukami… - Materials today, 2017 - Elsevier
This article reviews spintronics based memories, in particular, magnetic random access
memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale …

Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications

B Dieny, M Chshiev - Reviews of Modern Physics, 2017 - APS
Spin electronics is a rapidly expanding field stimulated by a strong synergy between
breakthrough basic research discoveries and industrial applications in the fields of magnetic …

Graphene spin valves for spin logic devices

P Ghising, C Biswas, YH Lee - Advanced Materials, 2023 - Wiley Online Library
An alternative to charge‐based electronics identifies the spin degree of freedom for
information communication and processing. The long spin‐diffusion length in graphene at …

Recent developments in perpendicular magnetic anisotropy thin films for data storage applications

B Tudu, A Tiwari - Vacuum, 2017 - Elsevier
The incessant demand for higher density, faster access time and lower power consuming
memory devices such as random access memories have driven tremendous research and …

Prospective of semiconductor memory devices: from memory system to materials

CS Hwang - Advanced Electronic Materials, 2015 - Wiley Online Library
The ever‐increasing demand for higher‐capacity digital memory shows no sign of declining.
The conventional strategy for meeting such demand, ie shrinking of the memory cell size …

Memory technology—a primer for material scientists

T Schenk, M Pešić, S Slesazeck… - Reports on Progress …, 2020 - iopscience.iop.org
From our own experience, we know that there is a gap to bridge between the scientists
focused on basic material research and their counterparts in a close-to-application …