Recent advancements in power electronic switches provide effective control and operational
stability of power grid systems. Junction temperature is a crucial parameter of power …

This article introduces new technologies for monitoring thermal response and life-time
varying parameters of power electronic modules in real time without interrupting normal …

The complete replacement of silicon devices with silicon carbide (SiC) devices still faces
many reliability challenges considering higher cost, higher junction temperature, and its …

Owing to the superior performances, silicon carbide (SiC) metal oxide semiconductor field
effect transistors (mosfet s) attract a lot of attention. To increase the power density, it is …

This article presents a new methodology for monitoring next generation SiC mosfet-based
converters. The methodology uses the spectral distribution of electroluminescence that is …

This work proposes a method for unified junction-temperature and device-current sensing
that utilizes the body-diode electroluminescence of SiC MOSFETs. During conduction, the …

A non-invasive temperature sensing method for high-voltage SiC MOSFET chips based on
the measurement of light emission during reverse conduction is proposed. The method is …

The online accurate junction temperature monitoring improves the reliability of power
converters throughout the lifetime of silicon carbide (SiC) metal–oxide–semiconductor field …

As a typical representative of third-generation semiconductor power devices, silicon carbide
(SiC) devices have gradually become the core components of power electronic systems …

The increasing awareness of environmental concerns and sustainability underlines the
importance of energy-efficient systems, renewable energy technologies, electric vehicles …