[HTML][HTML] Conductive nitrides: Growth principles, optical and electronic properties, and their perspectives in photonics and plasmonics
The nitrides of most of the group IVb-Vb-VIb transition metals (TiN, ZrN, HfN, VN, NbN, TaN,
MoN, WN) constitute the unique category of conductive ceramics. Having substantial …
MoN, WN) constitute the unique category of conductive ceramics. Having substantial …
The current-phase relation in Josephson junctions
This review provides a theoretical basis for understanding the current-phase relation (CΦR)
for the stationary (dc) Josephson effect in various types of superconducting junctions. The …
for the stationary (dc) Josephson effect in various types of superconducting junctions. The …
[HTML][HTML] Tracing the recorded history of thin-film sputter deposition: From the 1800s to 2017
JE Greene - Journal of Vacuum Science & Technology A, 2017 - pubs.aip.org
Thin films, ubiquitous in today's world, have a documented history of more than 5000 years.
However, thin-film growth by sputter deposition, which required the development of vacuum …
However, thin-film growth by sputter deposition, which required the development of vacuum …
[HTML][HTML] Paradigm shift in thin-film growth by magnetron sputtering: From gas-ion to metal-ion irradiation of the growing film
Ion irradiation is a key tool for controlling the nanostructure, phase content, and physical
properties of refractory ceramic thin films grown at low temperatures by magnetron …
properties of refractory ceramic thin films grown at low temperatures by magnetron …
Influence of nitrogen concentration on electrical, mechanical, and structural properties of tantalum nitride thin films prepared via DC magnetron sputtering
Tantalum nitride thin films are grown on silicon wafers using a mixture of Ar/N2 using DC
magnetron sputtering. The influence of nitrogen concentration on various features of …
magnetron sputtering. The influence of nitrogen concentration on various features of …
Energetics of point defects in rocksalt structure transition metal nitrides: Thermodynamic reasons for deviations from stoichiometry
First principle calculations of point defect formation energies in group 3–6 transition metal
(Me) nitrides MeN x are employed to explain the thermodynamic reasons for the large …
(Me) nitrides MeN x are employed to explain the thermodynamic reasons for the large …
Magnetron sputter deposition: Linking discharge voltage with target properties
D Depla, S Mahieu, R De Gryse - Thin Solid Films, 2009 - Elsevier
The discharge voltage is perhaps the most accessible parameter of the magnetron sputter
deposition process. As its value can be easily monitored, research reports generally contain …
deposition process. As its value can be easily monitored, research reports generally contain …
A review of metal-ion-flux-controlled growth of metastable TiAlN by HIPIMS/DCMS co-sputtering
We review results on the growth of metastable Ti 1− x Al x N alloy films by hybrid high-power
pulsed and dc magnetron co-sputtering (HIPIMS/DCMS) using the time domain to apply …
pulsed and dc magnetron co-sputtering (HIPIMS/DCMS) using the time domain to apply …
Optical and transport measurement and first-principles determination of the ScN band gap
The electronic structure of scandium nitride is determined by combining results from optical
and electronic transport measurements with first-principles calculations. Hybrid functional …
and electronic transport measurements with first-principles calculations. Hybrid functional …
Metal versus rare-gas ion irradiation during Ti1− xAlxN film growth by hybrid high power pulsed magnetron/dc magnetron co-sputtering using synchronized pulsed …
Metastable NaCl-structure Ti 1− x Al x N is employed as a model system to probe the effects
of metal versus rare-gas ion irradiation during film growth using reactive high-power pulsed …
of metal versus rare-gas ion irradiation during film growth using reactive high-power pulsed …