The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …

After more than five decades, Moore's Law for transistors is approaching the end of the
international technology roadmap of semiconductors (ITRS). The fate of complementary …

When the international technology roadmap of semiconductors (ITRS) started almost five
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …

In our environment, the large availability of wasted heat has motivated the search for
methods to harvest heat. As a reliable way to supply energy, SiGe has been used for …

The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit
bricks in integrated circuits (ICs) have constantly changed during the past five decades. The …

To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged
as the real alternative for use as the next generation device for IC fabrication technology …

Disclosed herein are exemplary embodiments of improved methods for performing selective
epitaxial deposition of semiconductor materials, including in situ carbon-doped …

This paper presents a novel FDSOI FinFETs with SiGe channel/Si cap layer (35 nm/5 nm)
formed on SOI wafers with 20 nm Si body. Electrical characterization result shows that JL …

SiGe has been widely used as stressors in source/drain (S/D) regions of Metal–Oxide-
Semiconductor Field Effect Transistor (MOSFET) to enhance the channel mobility. In this …

This article reviews the selective epitaxy growth of intrinsic, B-and C-doped SiGe layers on
recessed (or flat) exposed Si areas for MOSFETs as well as on Si-fins for FinFETs. A …