Recent progress on micro-LEDs
With the advent of technologies such as augmented/virtual reality (AR/VR) that are moving
towards displays with high efficiency, small size, and ultrahigh resolution, the development …
towards displays with high efficiency, small size, and ultrahigh resolution, the development …
The micro-LED roadmap: status quo and prospects
Micro light-emitting diode (micro-LED) will play an important role in the future generation of
smart displays. They are found very attractive in many applications, such as maskless …
smart displays. They are found very attractive in many applications, such as maskless …
Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers
H Wu, X Lin, Q Shuai, Y Zhu, Y Fu, X Liao… - Light: Science & …, 2024 - nature.com
Owing to high pixel density and brightness, gallium nitride (GaN) based micro-light-emitting
diodes (Micro-LEDs) are considered revolutionary display technology and have important …
diodes (Micro-LEDs) are considered revolutionary display technology and have important …
A red-emitting micrometer scale LED with external quantum efficiency> 8%
Significant efforts are being put into the development of efficient micrometer-scale light
emitting diodes (LEDs) for future display technologies due to their marked benefits over …
emitting diodes (LEDs) for future display technologies due to their marked benefits over …
Bottom‐Up Formation of III‐Nitride Nanowires: Past, Present, and Future for Photonic Devices
The realization of semiconductor heterostructures marks a significant advancement beyond
silicon technology, driving progress in high‐performance optoelectronics and photonics …
silicon technology, driving progress in high‐performance optoelectronics and photonics …
Band alignment and charge carrier transport properties of YAlN/III-nitride heterostructures
Incorporating rare earth element scandium (Sc) into III-nitride wurtzite lattice offers
remarkable non-oxide ferroelectrics, tunable spontaneous polarization coefficients, and …
remarkable non-oxide ferroelectrics, tunable spontaneous polarization coefficients, and …
Polaron and Exciton in a Lead-Free Vacancy-Ordered Cs2SnBr6 Double Perovskite
Y Guo, J Han, X Luo, H Tong, Z Zang… - The Journal of Physical …, 2024 - ACS Publications
Electron–phonon and electron–hole interactions have played a central role in the transport
and optoelectronic properties of lead-free vacancy-ordered double perovskites (VODPs). In …
and optoelectronic properties of lead-free vacancy-ordered double perovskites (VODPs). In …
Enhanced luminescence efficiency in Eu-doped GaN superlattice structures revealed by terahertz emission spectroscopy
Abstract Eu-doped Gallium nitride (GaN) is a promising candidate for GaN-based red light-
emitting diodes, which are needed for future micro-display technologies. Introducing a …
emitting diodes, which are needed for future micro-display technologies. Introducing a …
Growth of three-dimensional InGaN nanostructures by plasma-assisted molecular beam epitaxy
A study on the formation of InGaN ternary compounds in the three-dimensional growth mode
is presented. For the first time, we demonstrate that the self-organization during InGaN …
is presented. For the first time, we demonstrate that the self-organization during InGaN …
Instantaneous growth of single monolayers as the origin of spontaneous core–shell In x Ga 1− x N nanowires with bright red photoluminescence
Increasing the InN content in the InxGa1− xN compound is paramount for optoelectronic
applications. It has been demonstrated in homogeneous nanowires or deliberately grown …
applications. It has been demonstrated in homogeneous nanowires or deliberately grown …