Recent progress and current understanding of carrier lifetimes and avalanche phenomena
in silicon carbide (SiC) are reviewed. The acceptor level of carbon vacancy (VC), called the …

Anisotropy of the impact ionization coefficients of 4H silicon carbide is investigated by
means of the avalanche breakdown behavior of p+n diodes on (0001) and 112 0 4H silicon …

High field electron and hole transport in wurtzite phase GaN is studied using an ensemble
Monte Carlo method. The model includes the details of the full band structure derived from …

In this paper, we describe the state of the art in the numerical simulation of the carrier
transport properties of GaN and its ternary alloys. We outline the characteristics of our state …

Photomultiplication measurements using 244-and 325-nm excitation have been undertaken
on a series of thick 4H-SiC avalanche diodes. With avalanche widths of between 2.7 and 6 …

The high-field carrier transport properties of 4H-SiC including the impact ionization
coefficients are theoretically analyzed based on a full-band Monte Carlo simulation. The …

Using a full-band Monte Carlo model we have computed the carrier impact ionization
coefficients in Al x Ga 1− x N for seven alloy compositions between x= 0 (GaN) and x= 1.0 …

Important physical models for 4H silicon carbide (4H-SiC) are constructed based on the
literature and experiments on the physical properties of 4H-SiC. The obtained physical …

A full-band ensemble Monte Carlo simulation has been used to study the high-field carrier
transport properties of 4H-SiC. The complicated band structure of 4H-SiC requires the …

This article is intended to review measurements and modeling of anisotropic impact
ionization coefficients of electrons and holes in 4H‐SiC. Owing to the hexagonal crystal …